Normally-off Logic Based on Resistive Switches-Part I: Logic Gates

被引:77
作者
Balatti, Simone [1 ,2 ]
Ambrogio, Stefano [1 ,2 ]
Ielmini, Daniele [1 ,2 ]
机构
[1] Politecn Milan, Dipartimento Elettron Informaz & Bioingn, I-20133 Milan, Italy
[2] Politecn Milan, Italian Univ Nanoelect Team, I-20133 Milan, Italy
关键词
Logic circuits; logic computing; logic gates; resistive switching random access memory (RRAM); REAL-TIME OBSERVATION; DYNAMIC GROWTH/DISSOLUTION; CONDUCTIVE FILAMENTS; MEMORY; PROPOSAL; DEVICE;
D O I
10.1109/TED.2015.2422999
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
To extend the scaling of digital integrated circuits, beyond-CMOS approaches based on advanced materials and novel switching concepts are strongly needed. Among these approaches, the resistive switching random access memory (RRAM) allows for fast and nonvolatile switching at scalable power consumption. This work presents functionally complete logic gates based on RRAM technology. Logic computation is obtained through conditional switching in RRAM circuits with serially connected switches. AND, implication, NOT, and bit transfer operations are demonstrated, each using a single clock pulse, while other functions (e.g., OR and XOR) are achieved in multiple steps. The results support RRAM logic for normally-off digital circuits with extremely high density.
引用
收藏
页码:1831 / 1838
页数:8
相关论文
共 42 条
[1]   Design considerations for complementary nanoelectromechanical logic gates [J].
Akarvardar, K. ;
Elata, D. ;
Parsa, R. ;
Wan, G. C. ;
Yoo, K. ;
Provine, J. ;
Peurnans, P. ;
Howe, R. T. ;
Wong, H-S. P. .
2007 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, VOLS 1 AND 2, 2007, :299-302
[2]   Magnetic domain-wall logic [J].
Allwood, DA ;
Xiong, G ;
Faulkner, CC ;
Atkinson, D ;
Petit, D ;
Cowburn, RP .
SCIENCE, 2005, 309 (5741) :1688-1692
[3]   Impact of the Mechanical Stress on Switching Characteristics of Electrochemical Resistive Memory [J].
Ambrogio, Stefano ;
Balatti, Simone ;
Choi, Seol ;
Ielmini, Daniele .
ADVANCED MATERIALS, 2014, 26 (23) :3885-3892
[4]  
[Anonymous], 2013, IEDM, DOI DOI 10.1109/IEDM.2013.6724679
[5]  
[Anonymous], IEEE IEDM
[6]   A novel resistance memory with high scalability and nanosecond switching [J].
Aratani, K. ;
Ohba, K. ;
Mizuguchi, T. ;
Yasuda, S. ;
Shiimoto, T. ;
Tsushima, T. ;
Sone, T. ;
Endo, K. ;
Kouchiyama, A. ;
Sasaki, S. ;
Maesaka, A. ;
Yamada, N. ;
Narisawa, H. .
2007 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, VOLS 1 AND 2, 2007, :783-786
[7]  
Baek IG, 2005, INT EL DEVICES MEET, P769
[8]   Normally-off Logic Based on Resistive Switches-Part II: Logic Circuits [J].
Balatti, Simone ;
Ambrogio, Stefano ;
Ielmini, Daniele .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2015, 62 (06) :1839-1847
[9]  
Behin-Aein B, 2010, NAT NANOTECHNOL, V5, P266, DOI [10.1038/nnano.2010.31, 10.1038/NNANO.2010.31]
[10]   A Thermally Stable and High-Performance 90-nm Al2O3\Cu-Based 1T1R CBRAM Cell [J].
Belmonte, Attilio ;
Kim, Woosik ;
Chan, Boon Teik ;
Heylen, Nancy ;
Fantini, Andrea ;
Houssa, Michel ;
Jurczak, Malgorzata ;
Goux, Ludovic .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2013, 60 (11) :3690-3695