Transparent, conductive bulk GaN by high temperature ammonothermal growth

被引：12

作者：

Jiang, Wenkan ^{[1
]}

Ehrentraut, Dirk ^{[1
]}

Cook, Jonathan ^{[1
]}

Kamber, Derrick S. ^{[1
]}

Pakalapati, Rajeev T. ^{[1
]}

D'Evelyn, Mark P. ^{[1
]}

机构：

[1] Soraa Inc, Goleta, CA 93117 USA

来源：

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 2015年 / 252卷 / 05期

关键词：

ammonothermal growth; bulk crystals; doping; GaN; optical absorption; oxygen; VAPOR-PHASE EPITAXY; GALLIUM-NITRIDE; CRYSTAL-GROWTH; MINERALIZER; WAFERS; PURITY; HVPE;

D O I：

10.1002/pssb.201451587

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

A novel, highly scalable apparatus has been employed to perform high temperature ammonothermal growth of (0001) GaN bulk crystals up to 52mm in diameter and to a thickness of greater than 2 mm. X-ray characterization of the crystals shows excellent crystallinity with radii of curvature >20m and a 201 rocking curve FWHM of <30 arcsec. Hall effect and optical absorption measurements performed on the crystal show a free carrier concentration of 1.1 x 10(18) cm(-3) and an absorption coefficient of 1 cm(-1) at 450 nm and 2 cm(-1) at 410 nm, meeting the substrate requirements for use as a native substrate in blue or violet LED devices. To the best of our knowledge, this is the lowest optical absorption coefficient reported for ammonothermally-grown GaN having a carrier concentration above 10(18) cm(-3). (C) 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：1069 / 1074

页数：6

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