Gate-Controlled P-I-N Junction Switching Device with Graphene Nanoribbon

被引：17

作者：

Nakaharai, Shu ^{[1
]}

Iijima, Tomohiko ^{[2
]}

Ogawa, Shinichi ^{[2
]}

Miyazaki, Hisao ^{[3
]}

Li, Songlin ^{[3
]}

Tsukagoshi, Kazuhito ^{[3
]}

Sato, Shintaro ^{[1
]}

Yokoyama, Naoki ^{[1
]}

机构：

[1] Green Nanoelect Ctr GNC, Collaborat Res Team, Tsukuba, Ibaraki 3058569, Japan

[2] Natl Inst Adv Ind Sci & Technol, Innovat Ctr Adv Nanodevices ICAN, Tsukuba, Ibaraki 3058569, Japan

[3] Natl Inst Mat Sci NIMS, Int Ctr Mat Nanoarchitecton MANA, Tsukuba, Ibaraki 3050044, Japan

来源：

APPLIED PHYSICS EXPRESS | 2012年 / 5卷 / 01期

基金：

日本学术振兴会;

关键词：

D O I：

10.1143/APEX.5.015101

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A graphene P-I-N junction switching device with a nanoribbon is proposed, which was aimed at finding an optimized operation scheme for graphene transistors. The device has two bulk graphene regions where the carrier type is electrostatically controlled by a top gate, and these two regions are separated by a nanoribbon that works as an insulator, resulting in a junction configuration of (P or N)-I-(P or N). It is demonstrated that the drain current modulation strongly depends on the junction configuration, while the nanoribbon is not directly top-gated, and that the device with a P-I-N or N-I-P junction can exhibit better switching properties. (C) 2012 The Japan Society of Applied Physics

引用

页数：3

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