Electrical characterization and modelization of CaCu3Ti4O12 polycrystalline ceramics

被引：0

作者：

Cheballah, Chafe ^{[1
,2
]}

Valdez-Nava, Zarel ^{[1
,2
]}

Laudebat, Lionel ^{[1
,3
]}

Guillemet-Fritsch, Sophie ^{[4
]}

Lebey, Thierry ^{[1
,2
]}

机构：

[1] Univ Toulouse, UPS, INPT, LAPLACE Lab Plasma & Convers Energie, F-31062 Toulouse 9, France

[2] CNRS, LAPLACE, F-31062 Toulouse, France

[3] Ctr Univ Jean Francois Champoll, F-81012 Albi, France

[4] Univ Toulouse 3, Inst Carnot CIRIMAT Ctr Interuniv Rech & Ingn Mat, F-31062 Toulouse 9, France

来源：

EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS | 2015年 / 70卷 / 03期

关键词：

HIGH-DIELECTRIC-CONSTANT; DECREASE;

D O I：

10.1051/epjap/2015150063

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Since the observation almost 15 years ago of the so-called "colossal" dielectric permittivity behavior in CaCu3Ti4O12 (CCTO) ceramics, several works have been undertaken to understand its physical origin interfacial polarization being the most likelihood. In this paper, (C-V) measurements, commonly used on semiconducting materials have been used to characterize CCTO samples. Their results may be described by a head-to-tail double metal-insulating-semiconductor (MIS) structure. A comparison between experimental and numerical simulation results of such a structure shows a good agreement, whatever the frequency range. Furthermore, this model explains the non-symmetrical behavior of the electrical response of this material, a property still not taken into account by today's commonly known models.

引用

页数：6

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