Siloxane and carbosiloxane based dendrimers:: Synthesis, reaction chemistry, and potential applications

被引：0
作者：
Lang, H [1 ]
Lühmann, B [1 ]
机构：
[1] Tech Univ Chemnitz, Fak Nat Wissensch, Inst Chem, Lehrstuhl Anorgan Chem, D-09111 Chemnitz, Germany
来源：
ADVANCED MATERIALS | 2001年 / 13卷 / 20期
关键词：
D O I：
10.1002/1521-4095(200110)13:20<1523::AID-ADMA1523>3.0.CO;2-P
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
Recent developments in the Held of siloxane and carbosiloxane dendrimers with the silicon atoms as the branching points (see Figure) are discussed in this review. It treats in a comprehensive way the divergent growth method for the synthesis of the Si-O- and Si-O-C-based dendrimers, including their reaction chemistry, their theoretical and physical descriptions, as well as their potential applications in the area of materials science.
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页码：1523 / +
页数：19
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