High-power blue-violet AlGaN-cladding-free m-plane InGaN/GaN laser diodes

被引：30

作者：

Farrell, R. M. ^{[1
]}

Haeger, D. A. ^{[2
]}

Hsu, P. S. ^{[2
]}

Schmidt, M. C. ^{[2
]}

Fujito, K. ^{[3
]}

Feezell, D. F. ^{[2
]}

DenBaars, S. P. ^{[1
,2
]}

Speck, J. S. ^{[2
]}

Nakamura, S. ^{[1
,2
]}

机构：

[1] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

[2] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

[3] Mitsubishi Chem Corp, Optoelect Labs, Ushiku, Ibaraki 3001295, Japan

来源：

APPLIED PHYSICS LETTERS | 2011年 / 99卷 / 17期

关键词：

GAN; OPERATION; NITRIDE;

D O I：

10.1063/1.3656970

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We demonstrate AlGaN-cladding-free (ACF) m-plane InGaN/GaN laser diodes (LDs) with peak output powers and estimated front facet optical power densities that are comparable to the state-of-the-art single-stripe emitter c-plane LDs. The threshold current density, slope efficiency, and peak output power were 4.66 kA/cm(2), 1.29 W/A, and 1.6 W, respectively, after facet coating and under pulsed conditions. Catastrophic optical mirror damage was not observed up to an estimated optical power density of 51.2 MW/cm(2) at the front mirror facet, indicating the potential for using ACF m-plane InGaN/GaN LDs in high-power LD applications. (C) 2011 American Institute of Physics. [doi:10.1063/1.3656970]

引用

页数：3

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