Ultrahigh Al Schottky barrier to p-Si

被引：7
|
作者：
Horváth, ZJ [1 ]
Adám, M [1 ]
Van Tuyen, V [1 ]
Dücso, C [1 ]
机构：
[1] Hungarian Acad Sci, Res Inst Tech Phys & Mat Sci, H-1525 Budapest 114, Hungary
来源：
ASDAM'98, SECOND INTERNATIONAL CONFERENCE ON ADVANCED SEMICONDUCTOR DEVICES AND MICROSYSTEMS, CONFERENCE PROCEEDINGS | 1998年
关键词：
D O I：
10.1109/ASDAM.1998.730172
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The possibility of barrier height enhancement of Schottky junctions on p-type Si was studied by using a chemical passivation procedure. Schottky barrier heights up to 0.91 eV have been obtained, due probably to the unpinning of the Fermi-level at the Al/Si interface. It is probably the highest barrier height value published so far for a solid-state Schottky junction prepared on p-Si.
引用
收藏
页码：83 / 86
页数：4
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