Temporal Differential CMOS Image Sensor for Low-Light and High-Speed Applications

被引：0

作者：

Guan Ning ^{[1
]}

Zhang Xu ^{[1
]}

Dong Zan ^{[1
]}

Wang Wei ^{[1
]}

Gui Yun ^{[1
]}

Han Jianqiang ^{[1
]}

Wang Yuan ^{[1
]}

Huang Beiju ^{[1
]}

Chen Hongda ^{[1
]}

机构：

[1] Chinese Acad Sci, State Key Lab Integrated Optoelect, Inst Semicond, Beijing, Peoples R China

来源：

INTERNATIONAL SYMPOSIUM ON PHOTOELECTRONIC DETECTION AND IMAGING 2011: ADVANCES IN IMAGING DETECTORS AND APPLICATIONS | 2011年 / 8194卷

关键词：

CMOS image sensor; exposure control; temporal difference; focal plane array; DYNAMIC-RANGE;

D O I：

10.1117/12.900682

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new structure of pixels of CMOS image sensors is presented in this article. With multiple layers of metal, it is possible to separate control pins of adjacent pixels. These separated control pins make it possible to overlap exposure time of these pixels. After recovering information with temporal difference from the raw data of overlapping exposure, the temporal resolution can be smaller than the exposure time. This kind of pixels can be used in low-light or high-speed applications where the choices of exposure time is limited.

引用

页数：6

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