The effect of oxygen partial pressure on physical properties of nano-crystalline silver oxide thin films deposited by RF magnetron sputtering

被引:16
作者
Reddy, P. Narayana [1 ]
Sreedhar, A. [1 ]
Reddy, M. Hari Prasad [1 ]
Uthanna, S. [1 ]
Pierson, J. F. [2 ]
机构
[1] Sri Venkateswara Univ, Dept Phys, Tirupati 517502, Andhra Pradesh, India
[2] Nancy Univ, Ecole Mines, Dept CP2S, Inst Jean Lamour,UMR 7198,CNRS, F-54042 Nancy, France
关键词
silver oxide; magnetron sputtering; XPS; structure; electrical; optical properties; AGOX FILM; COPPER;
D O I
10.1002/crat.201100206
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
Nano-crystalline silver oxide films were deposited on glass and silicon substrates held at room temperature by RF magnetron sputtering of silver target under different oxygen partial pressures. The influence of oxygen partial pressure on the structural, morphological, electrical and optical properties of deposited films was investigated. Varying oxygen partial pressure during the sputter deposition leads to changes of mixed phase of Ag2O and Ag to a single phase of Ag2O and to AgO. The X-ray diffraction and X-ray photoelectron spectroscopy results showed the formation of single phase Ag2O with cubic structure at oxygen partial pressures of 2x10(-2) Pa while the films deposited at higher oxygen partial pressure of 9x10(-2) Pa showed the formation of single phase of AgO with monoclinic structure. Raman spectroscopic studies on the single phase Ag2O showed the stretching vibration of Ag-O bonds. Single-phase Ag2O films obtained at oxygen partial pressure of 2x10(-2) Pa were nano-crystalline with crystallite size of 20 nm and possessed an electrical resistivity of 5.2x10(-3) Omega cm and optical band gap of 2.05 eV. The films deposited at higher oxygen partial pressure of 9x10(-2) Pa were of AgO with electrical resistivity of 1.8x10(-2) Omega cm and optical band gap of 2.13 eV. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
引用
收藏
页码:961 / 966
页数:6
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