Production of S-doped porous graphene via post-treatment with MgSO4 as sulphur source

The introduction of S atoms into graphitic framework of graphene, has been demonstrated as an effective strategy to further enhance the capacitive performance. Nevertheless, the practical application and scalable production of S-doped graphene still remain great challenges because of the employment of toxic and expensive S-containing precursors during the preparation process coupled with harsh operating conditions. Herein, the developed facile post-treatment doping methodology based on the fluidized bed technique is capable of achieving the superior capacitive S-doped porous graphene (SPG) with a high yield and the good porosity of SPG is well-retained. The amount of defects and electronic conductivity of PG have obviously increased after incorporation of S atoms. The excellent capacitive behaviors of SPG in supercapacitors are benefited from the combination of well-developed pore channels and S doping. The post-treatment methodology coupled with fluidized bed technique is promising to open a new way for the mass production of SPG. Additionally, the developed methodology can be employed to prepare arbitrary S-doped carbon materials, such as S-doped porous carbon and S-doped carbon black, demonstrating the good universality.