The dynamics of optical bistability layer crystals

被引:0
作者
Zenkova, C. Yu. [1 ]
机构
[1] Chernivtsi Natl Univ, Opt & Spect Dept, UA-58012 Chernovtsy, Ukraine
来源
ADVANCED TOPICS IN OPTOELECTRONICS, MICROELECTRONICS, AND NANOTECHNOLOGIES IV | 2009年 / 7297卷
关键词
layer crystal; optical bistability; exciton; EXCITON SPECTRA; SEMICONDUCTORS;
D O I
10.1117/12.823614
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The impact of temperature, incident light polarization and a weak external magnetic field upon the conditions of optical bistability (OB) realization in the exciton absorption region of layer semiconductors has been investigated. With the 2H-polytype PbI2 used as an example, the possibility of obtaining the OB realization region by changing the external factors has been shown. It has been also demonstrated that the change of these parameters can control the position and values of the absorption hysteresis loop of corresponding layer crystal excitation exciton zones.
引用
收藏
页数:6
相关论文
共 15 条
[1]  
ABRAHAM E, 1983, SCI AM, V248, P63
[2]  
Brodin M. S., 1986, EXCITON PROCESSES LA
[3]   ANISOTROPIC EXCITON SCATTERING BY BENDING WAVES IN LAYER CRYSTALS [J].
BRODIN, MS ;
BLONSKII, IV ;
NITSOVICH, BM .
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1983, 117 (02) :K99-K103
[4]   EXCITON SPECTRA IN THIN CRYSTALS - DIAMAGNETIC EFFECT [J].
EVANS, BL ;
YOUNG, PA .
PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1967, 91 (572P) :475-&
[5]  
Gibbs H.M., 1985, Optical Bistability: Controlling Light with Light
[6]  
KANSAKI K, 1972, J PHYS SOC JPN, V32, P1003
[7]  
MCCALL SL, 1975, B AM PHYS SOC, V20, P636
[8]   CHARGE TRANSPORT IN LAYER SEMICONDUCTORS [J].
MINDER, R ;
OTTAVIANI, G ;
CANALI, C .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1976, 37 (04) :417-424
[9]  
Nitsovich BM, 1996, FIZ TVERD TELA+, V38, P1626
[10]  
NITSOVICH BM, 1986, FIZ TVERD TELA+, V28, P2424