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Structure control and ferroelectric properties of SrBi4Ti4O15 thin films on Si substrates coated by (100)and (110)-oriented LaNiO3 electrodes
被引:0
作者:
Wang, Pilong
Hu, Guangda
[1
]
Ding, Yanxia
Fan, Shuhua
机构:
[1] Univ Jinan, Sch Mat Sci & Engn, Jinan 250022, Peoples R China
[2] Shandong Jianzhu Univ, Coll Mat Sci & Engn, Jinan 250101, Peoples R China
基金:
中国国家自然科学基金;
关键词:
SrBi4Ti4O15 thin film;
LaNiO3 thin film;
metalorganic decomposition;
epitaxial growth;
D O I:
10.1142/S0218625X07009554
中图分类号:
O64 [物理化学(理论化学)、化学物理学];
学科分类号:
070304 ;
081704 ;
摘要:
SrBi4Ti4O15 ( SBTi) thin films were prepared on ( 100)- and ( 110)- oriented LaNiO3( LNO) electrodes by a metalorgranic decomposition ( MOD) technique at an annealing temperature of 650 degrees C. c-axis-oriented SBTi thin film with volume fraction of 0.89 can be formed on a ( 100)oriented LNO film due to the epitaxial relationship between c-axis-oriented SBTi and LNO( 100). In contrast, SBTi film deposited on LNO( 110) shows random orientations with strong ( 119) and ( 200) peaks. The remanent polarization ( P-r) and coercive field ( E-c) of the random oriented SBTi film were 18.1 mu C/cm(2) and 70 kV/ cm, respectively. This suggests that ( 110)- oriented LNO electrode is a better choice for obtaining SBTi films with higher volume fraction ofa( b)- axisorientated grains.
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页码:435 / 438
页数:4
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