Structure control and ferroelectric properties of SrBi4Ti4O15 thin films on Si substrates coated by (100)and (110)-oriented LaNiO3 electrodes

被引：0
作者：
Wang, Pilong
Hu, Guangda [1 ]
Ding, Yanxia
Fan, Shuhua
机构：
[1] Univ Jinan, Sch Mat Sci & Engn, Jinan 250022, Peoples R China
[2] Shandong Jianzhu Univ, Coll Mat Sci & Engn, Jinan 250101, Peoples R China
来源：
SURFACE REVIEW AND LETTERS | 2007年 / 14卷 / 03期
基金：
中国国家自然科学基金;
关键词：
SrBi4Ti4O15 thin film; LaNiO3 thin film; metalorganic decomposition; epitaxial growth;
D O I：
10.1142/S0218625X07009554
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
SrBi4Ti4O15 ( SBTi) thin films were prepared on ( 100)- and ( 110)- oriented LaNiO3( LNO) electrodes by a metalorgranic decomposition ( MOD) technique at an annealing temperature of 650 degrees C. c-axis-oriented SBTi thin film with volume fraction of 0.89 can be formed on a ( 100)oriented LNO film due to the epitaxial relationship between c-axis-oriented SBTi and LNO( 100). In contrast, SBTi film deposited on LNO( 110) shows random orientations with strong ( 119) and ( 200) peaks. The remanent polarization ( P-r) and coercive field ( E-c) of the random oriented SBTi film were 18.1 mu C/cm(2) and 70 kV/ cm, respectively. This suggests that ( 110)- oriented LNO electrode is a better choice for obtaining SBTi films with higher volume fraction ofa( b)- axisorientated grains.
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页码：435 / 438
页数：4
相关论文
共 11 条
[1]  
DEARAUJO AP, 1995, NATURE, V374, P627
[2]   Low-temperature preparation and characterization of SrBi2Ta2O9 thin films on (100)-oriented LaNiO3 electrodes [J].
Hu, GD ;
Wilson, IH ;
Xu, JB ;
Li, CP ;
Wong, SP .
APPLIED PHYSICS LETTERS, 2000, 76 (13) :1758-1760
[3]   Dielectric and ferroelectric properties of SrBi4Ti4O15 single crystals [J].
Irie, H ;
Miyayama, M .
APPLIED PHYSICS LETTERS, 2001, 79 (02) :251-253
[4]   Comparison of microstructure and ferroelectric properties of alkoxy-derived MBi4Ti4O15 (M: Ca or Sr) thin films [J].
Kato, K ;
Suzuki, K ;
Nishizawa, K ;
Miki, T .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2001, 40 (9B) :5580-5584
[5]  
LU CJ, 2005, APPL PHYS LETT, V87, P22903
[6]   STRUCTURE REFINEMENT OF COMMENSURATELY MODULATED BISMUTH TITANATE, BI4TI3O12 [J].
RAE, AD ;
THOMPSON, JG ;
WITHERS, RL ;
WILLIS, AC .
ACTA CRYSTALLOGRAPHICA SECTION B-STRUCTURAL SCIENCE, 1990, 46 :474-487
[7]   Ferroelectric characteristics of SrBi4Ti4O15 thin films grown on Pt/Ti/SiO2/Si substrates by the soft chemical method [J].
Simoes, A. Z. ;
Ramirez, M. A. ;
Riccardi, C. S. ;
Longo, E. ;
Varela, J. A. .
MATERIALS LETTERS, 2006, 60 (16) :2020-2023
[8]   Ferroelectric SrBi4Ti4O15 thin films with high polarization grown on an IrO2 layer [J].
Sohn, DS ;
Xianyu, WX ;
Lee, WI ;
Lee, I ;
Chung, I .
APPLIED PHYSICS LETTERS, 2001, 79 (22) :3672-3674
[9]  
Wang P., UNPUB
[10]   SrBi4Ti4O15 thin films of Ti containing bismuth-layered-ferroelectrics prepared by pulsed laser deposition [J].
Zhang, ST ;
Sun, B ;
Yang, B ;
Chen, YF ;
Liu, ZG ;
Ming, NB .
MATERIALS LETTERS, 2001, 47 (06) :334-338
12