Organic field-effect transistors and memory elements using deoxyribonucleic acid (DNA) gate dielectric

被引：107

作者：

Stadler, Philipp

Oppelt, Kerstin

Singh, Thokchom Birendra ^{[1
]}

Grote, James G.

Schwoediauer, Reinhard

Bauer, Siegfried

Piglmayer-Brezina, Heidi

Baeuerle, Dieter

Sariciftci, Niyazi Serdar

机构：

[1] Johannes Kepler Univ Linz, Linz Inst Organ Solar Cells, A-4040 Linz, Austria

[2] AFRL MLPS, Wright Patterson Air Force Base, Wright Patterson AFB, OH 45433 USA

[3] Johannes Kepler Univ Linz, SOMAP, A-4040 Linz, Austria

[4] Johannes Kepler Univ Linz, Inst Angew Phys, A-4040 Linz, Austria

来源：

ORGANIC ELECTRONICS | 2007年 / 8卷 / 06期

基金：

奥地利科学基金会;

关键词：

deoxyribonucleic acid; organic transistors; hysteresis; organic dielectric; persistent polarization;

D O I：

10.1016/j.orgel.2007.05.003

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Deoxyribonucleic acid (DNA) bio-polymers derived from fish waste products are employed as gate dielectric in n-type methanofullerene as well as p-type pentacene based organic field-effect transistors working at low voltage levels and low gate leakage currents. Based on the large hysteresis in the transfer characteristics, operation of the transistor as a non-volatile memory element is shown. Practically hysteresis free operation of DNA based transistors is obtained at low voltage levels by adding an additional aluminium oxide blocking layer between the organic semiconductor and the DNA gate dielectric. (c) 2007 Elsevier B.V. All rights reserved.

引用

页码：648 / 654

页数：7

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