GaAs-based tunnel junctions

被引：0
作者：
Möller, C [1 ]
Böttcher, J [1 ]
Künzel, H [1 ]
机构：
[1] Heinrich Hertz Inst Nachrichtentech Berlin GmbH, D-10587 Berlin, Germany
来源：
10TH INTERNATIONAL SYMPOSIUM ON NANOSTRUCTURES: PHYSICS AND TECHNOLOGY | 2003年 / 5023卷
关键词：
GaAs; tunnel jjnction; current spreading; LED; VCSEL; micro cavity;
D O I：
10.1117/12.514616
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
The development of high quality GaAs-based tunnel junctions grown by molecular beam epitaxy was systematically studied. Fabricated Si/Be-doped GaAs tunnel junctions show record low junction resistance of less than 7 x 10(-5) Omega/cm(2) and a peak current density of > 1900 A/cm(2). The enhancement of lateral current spreading is demonstrated by large-area vertical-emitting LEDs.
引用
收藏
页码：516 / 518
页数：3
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