GaAs-based tunnel junctions

被引：0

作者：

Möller, C ^{[1
]}

Böttcher, J ^{[1
]}

Künzel, H ^{[1
]}

机构：

[1] Heinrich Hertz Inst Nachrichtentech Berlin GmbH, D-10587 Berlin, Germany

来源：

10TH INTERNATIONAL SYMPOSIUM ON NANOSTRUCTURES: PHYSICS AND TECHNOLOGY | 2003年 / 5023卷

关键词：

GaAs; tunnel jjnction; current spreading; LED; VCSEL; micro cavity;

D O I：

10.1117/12.514616

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

The development of high quality GaAs-based tunnel junctions grown by molecular beam epitaxy was systematically studied. Fabricated Si/Be-doped GaAs tunnel junctions show record low junction resistance of less than 7 x 10(-5) Omega/cm(2) and a peak current density of > 1900 A/cm(2). The enhancement of lateral current spreading is demonstrated by large-area vertical-emitting LEDs.

引用

页码：516 / 518

页数：3

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