The signal-to-noise ratio and a hidden symmetry of Hall plates

被引:14
作者
Ausserlechner, Udo [1 ]
机构
[1] Infineon Technol Austria AG, Siemensstr 2, A-9500 Villach, Austria
关键词
Hall plate; Hall geometry factor; Symmetry; Signal-to-noise ratio; DER-PAUW MEASUREMENT; SHEET RESISTANCE; FINITE CONTACTS; MOBILITY; DEVICES;
D O I
10.1016/j.sse.2017.06.007
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In a Hall plate with finite size and contacts the Hall output voltage is given by the product of sheet resistance, input current, Hall mobility, magnetic flux density, and Hall geometry factor G(H). G(H) is an element of [0,1] accounts for the loss in signal due to the contacts. At weak magnetic field G(H) -> G(H0) is a function of geometrical parameters only, which makes it the crucial point for layout optimization. We show how to express G(H0) alternatively as a function of electrical parameters only, namely of input and output resistances over sheet resistance. This allows for an analytical optimization of signal-to-noise-ratio (SNR) without getting lost in the multitude of geometrical representations of equivalent Hall plates. In the course of this investigation we notice a hidden symmetry property of G(H), which we prove rigorously in the limit of small magnetic fields. The physical meaning of this symmetry in the case of Hall plates with equal input and output resistances is also explained. (C) 2017 Elsevier Ltd. All rights reserved.
引用
收藏
页码:14 / 23
页数:10
相关论文
共 25 条
[1]  
Ausserlechner U, 2004, P 3 IEEE C SENS VIEN, P1117
[2]  
Ausserlechner U., 2015, ELECTRON ENG, P1
[3]   Van-der-Pauw measurement on devices with four contacts and two orthogonal mirror symmetries [J].
Ausserlechner, Udo .
SOLID-STATE ELECTRONICS, 2017, 133 :53-63
[4]  
Ausserlechner U, 2016, U POLITEH BUCH SER A, V78, P275
[5]   Hall Effect Devices with Three Terminals: Their Magnetic Sensitivity and Offset Cancellation Scheme [J].
Ausserlechner, Udo .
JOURNAL OF SENSORS, 2016, 2016
[6]   Closed form expressions for sheet resistance and mobility from Van-der-Pauw measurement on 90° symmetric devices with four arbitrary contacts [J].
Ausserlechner, Udo .
SOLID-STATE ELECTRONICS, 2016, 116 :46-55
[7]   How to Extract the Sheet Resistance and Hall Mobility From Arbitrarily Shaped Planar Four-Terminal Devices With Extended Contacts [J].
Cornils, Martin ;
Rottmann, Axel ;
Paul, Oliver .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2010, 57 (09) :2087-2097
[8]  
DEMEY G, 1974, J I ELECTRON RAD ENG, V44, P321, DOI 10.1049/ree.1974.0088
[9]  
Glasser ML, ARXIV170106310V2MATH
[10]   EXAKTE LOSUNGEN VON POTENTIALPROBLEMEN BEIM HALLEFFEKT DURCH KONFORME ABBILDUNG [J].
HAEUSLER, J .
SOLID-STATE ELECTRONICS, 1966, 9 (05) :417-&