Improved dielectric properties of BeO thin films grown by plasma enhanced atomic layer deposition

被引：10

作者：

Jang, Yoonseo ^{[1
,2
]}

Lee, Seung Min ^{[1
,2
]}

Jung, Do Hwan ^{[1
,2
]}

Yum, Jung Hwan ^{[3
]}

Larsen, Eric S. ^{[3
,4
]}

Bielawski, Christopher W. ^{[3
,4
,5
]}

Oh, Jungwoo ^{[1
,2
]}

机构：

[1] Yonsei Univ, Sch Integrated Technol, Incheon 21983, South Korea

[2] Yonsei Inst Convergence Technol, Incheon 21983, South Korea

[3] IBS, CMCM, Ulsan 44919, South Korea

[4] UNIST, Dept Chem, Ulsan 44919, South Korea

[5] UNIST, Dept Energy Engn, Ulsan 44919, South Korea

来源：

SOLID-STATE ELECTRONICS | 2020年 / 163卷

基金：

新加坡国家研究基金会;

关键词：

Beryllium oxide; Plasma enhanced atomic-layer deposition; Metal oxide semiconductor capacitors; Bandgap energy; Dielectric constant; BERYLLIUM-OXIDE; CRYSTALLINE BEO; METAL; DIOXIDE; AL2O3;

D O I：

10.1016/j.sse.2019.107661

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Beryllium oxide (BeO) thin films were grown on a p-type Si substrate by plasma enhanced atomic layer deposition (PEALD) using diethylberyllium as a precursor and O-2 plasma. The PEALD BeO exhibited self-saturation and linear growth rates. The dielectric properties of PEALD were compared with those of thermal atomic layer deposition (ThALD). X-ray photoelectron spectroscopy was performed to determine the bandgap energy of PEALD BeO (8.0 eV) and ThALD BeO (7.9 eV). Capacitance-voltage curves revealed that PEALD BeO had low hysteresis and frequency dispersion compared to ThALD BeO. In addition, PEALD showed a dielectric constant of 7.15 (at 1 MHz) and low leakage current (7.25 x 10(-9) A/cm(2) at -1 MV/cm). These results indicate that the highly activated radicals from oxygen plasma prompt the chemical reaction at the substrate, thus reducing nucleation delay and interface trap density.

引用

页数：6

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