Quantum Hall Effects in Silicene

被引:55
作者
Ezawa, Motohiko [1 ]
机构
[1] Univ Tokyo, Dept Appl Phys, Bunkyo Ku, Tokyo 1138656, Japan
关键词
graphene; silicene; quantum Hall effect; Landau level; spin-orbit interaction; Rashba interaction; Dirac fermion; supersymmetry; ELECTRONIC-PROPERTIES; BERRYS PHASE;
D O I
10.1143/JPSJ.81.064705
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We investigate quantum Hall effects in silicene by applying electric field E-z parallel to magnetic field. Silicene is a monolayer of silicon atoms forming a two-dimensional honeycomb lattice, and shares almost every remarkable property with graphene. A new feature is its buckled structure, due to which the band structure can be controlled externally by changing E-z. The low energy physics of silicene is described by massive Dirac fermions, where the mass is a function of E-z and becomes zero at the critical field E-cr. We show that there are no zero energy states due to the Dirac mass term except at the critical electric field E-cr. Furthermore it is shown that the 4-fold degenerate zero-energy states are completely resolved even without considering Coulomb interactions. These features are highly contrasted with those in graphene, demonstrating that silicene has a richer structure. The prominent feature is that, by applying the electric field, we can control the valley degeneracy. As a function of E-z, Hall plateaux appear at the filling factors v = 0, +/- 1; +/- 2; +/- 3,... except for the points where level crossings occur.
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页数:6
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