Electrical and deep levels characteristics of ZnO/Si heterostructure by MOCVD deposition

被引：23

作者：

Liu Ci-Hui ^{[1
]}

Liu Bing-Ce ^{[2
]}

Fu Zhu-Xi ^{[1
]}

机构：

[1] Univ Sci & Technol China, Dept Phys, Hefei 230026, Peoples R China

[2] Univ Sci & Technol China, Dept Electron Sci & Technol, Hefei 230026, Peoples R China

来源：

CHINESE PHYSICS B | 2008年 / 17卷 / 06期

关键词：

MOCVD; ZnO/Si heterostructure; PL spectra; deep-level emission;

D O I：

10.1088/1674-1056/17/6/060

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

ZnO films have been prepared on p-type Si substrates by metal-organic chemical vapour deposition (MOCVD) at different total gas flow rates. The current versus voltage and temperature (I-V-T) characteristics, the deep-level transient spectroscopy (DLTS) and the photoluminescence (PL) spectra of the samples were measured. DLTS shows two deep-level centres of E-1(E-C-0.13 +/- 0.02 eV) and E-2(E-C-0.43 +/- 0.05 eV) in sample 1202a, which has a ZnO/p-Si heterostructure. A deep level at E-C-0.13 +/- 0.01 eV was also obtained from the I-T characteristics. It was considered to be the same as El obtained from DLTS measurement. The emission related to this deep level center was detected by PL spectra. In addition, the energy location and the relative trap density of El was varied when the total gas flow rate was changed.

引用

页码：2292 / 2296

页数：5

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