Growth of Bi2Sr2Cu1Ox films by laser ablation

被引：3
作者：
Perrière, J
Defourneau, RM
Laurent, A
Morcrette, M
Seiler, W
机构：
[1] Univ Paris 07, CNRS UMR 7588, Phys Solides Grp, F-75251 Paris 05, France
[2] Ecole Natl Super Arts & Metiers, Lab Microstruct & Mecan Mat, F-75013 Paris, France
来源：
PHYSICA C | 1999年 / 311卷 / 3-4期
关键词：
thin films; laser ablation; crystalline phase; superconductivity;
D O I：
10.1016/S0921-4534(98)00628-5
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The formation and the properties of thin BiSrCuO films grown on MgO single crystal substrates by the pulsed laser ablation of a Bi2Sr2Cu1O6 target have been studied. The precise influence of the oxygen pressure and substrate temperature on the atomic composition, nature and structure of the grown phases, crystalline quality and superconductivity of the films has been analyzed. In the 600-750 degrees C temperature range and 0.05-0.5 mbar oxygen pressure range, highly textured films of the 2201 phase (Bi2Sr2Cu1O6 phase) were formed despite large composition deviations (Bi enrichment and Sr depletion) with respect to the ideal composition. A high crystalline quality was evidenced for films grown at low and intermediate pressure and high temperature. chi(min) values in the films deduced from channeling experiments were similar to the case of single crystal material. Despite this high crystalline quality, incomplete or very low T-c superconducting transitions were observed in the resistivity measurements. (C) 1999 Published by Elsevier Science B.V. All rights reserved.
引用
收藏
页码：231 / 238
页数：8
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