Structural and gasochromic properties of epitaxial WO3 films prepared by pulsed laser deposition

被引：32

作者：

Yamamoto, S. ^{[1
]}

Inouye, A. ^{[2
]}

Yoshikawa, M. ^{[1
]}

机构：

[1] Japan Atom Energy Agcy, Quantum Beam Sci Directorate, Gunma 3701292, Japan

[2] Tohoku Univ, Sch Engn, Aoba Ku, Sendai, Miyagi 9808579, Japan

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2008年 / 266卷 / 05期

基金：

日本学术振兴会;

关键词：

tungsten oxide; pulsed laser deposition; RBS; XRD; Raman spectroscopy;

D O I：

10.1016/j.nimb.2007.12.092

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

The structural and gasochromic properties of epitaxial tungsten trioxide (WO3) thin films, prepared by ArF excimer pulsed laser deposition under the controlled oxygen atmosphere.. have been investigated. The WO3 films were grown on the alpha-Al2O3 (01 (1) over bar2) substrates, as the oxygen pressure ranged from 0.57 to 1.20 Pa and the substrate temperature ranged from 432 to 538 degrees C. The deposited films were characterized by Rutherford backscattering spectroscopy (RBS)/channeling, X-ray diffraction, X-ray pole figures and Raman spectroscopy. RBS and XRD results demonstrated that monoclinic WO3 (001) films were successfully grown on the alpha-Al2O3 (01 (1) over bar2) substrates. The crystal quality was improved by increasing both the oxygen pressure and the substrate temperature. Gasochromic coloration in the WO3 films by exposure to diluted hydrogen gas was found to correlate with the crystal quality of the films. The gasochromic coloration was suppressed by the epitaxial growth of the films. (c) 2008 Elsevier B.V. All rights reserved.

引用

页码：802 / 806

页数：5

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