Scintillation Properties of Li-doped ZnO Translucent Ceramic

被引:27
作者
Kunikata, Toshiaki [1 ]
Kato, Takumi [1 ]
Shiratori, Daiki [1 ]
Nakauchi, Daisuke [1 ]
Kawaguchi, Noriaki [1 ]
Yanagida, Takayuki [1 ]
机构
[1] Nara Inst Sci & Technol, 8916-5 Takayama, Nara 6300192, Japan
基金
日本学术振兴会;
关键词
Li-doped ZnO; scintillation; translucent ceramic; annealing effect; lattice defects; INDUCED LUMINESCENCE PROPERTIES; PHOTOLUMINESCENCE;
D O I
10.18494/SAM3683
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
We synthesized a 0.1% Li-doped ZnO translucent ceramic using spark plasma sintering (SPS) and annealed it at 700 or 800 degrees C in air. The photoluminescence (PL) and scintillation properties of all samples were evaluated. The PL quantum yield (QY) and scintillation light yield (LY) were improved by annealing owing to the reduction in the number of oxygen defects in comparison with the as-prepared sample. Among the translucent ceramic samples, the sample annealed at 700 degrees C showed the highest LY (5800 ph/5.5 MeV-alpha); the scintillation LY was lower in the sample annealed at 800 degrees C because of the increase in the number of trap sites.
引用
收藏
页码:661 / 668
页数:8
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