Electrostatic discharge robustness of amorphous indium-gallium-zinc-oxide thin-film transistors

被引：8

作者：

Simicic, Marko ^{[1
]}

Ashif, Nowab Reza ^{[2
]}

Hellings, Geert ^{[1
]}

Chen, Shih-Hung ^{[1
]}

Nag, Manoj ^{[1
]}

Kronemeijer, Auke Jisk ^{[3
]}

Myny, Kris ^{[1
]}

Linten, Dimitri ^{[1
]}

机构：

[1] IMEC, Kapeldreef 75, Leuven 3001, Belgium

[2] Karlsruhe Inst Technol, Karlsruhe Sch Opt & Photon, Karlsruhe, Germany

[3] TNO Holst Ctr, High Tech Campus 31, NL-5656 AE Eindhoven, Netherlands

来源：

MICROELECTRONICS RELIABILITY | 2020年 / 108卷

基金：

欧洲研究理事会;

关键词：

Electrostatic discharge; ESD; Thin-film transistor; TFT; Indium-gallium-zinc-oxide; Indium-tin-zinc-oxide; IGZO; ITZO; INTEGRATED-CIRCUITS; RELIABILITY;

D O I：

10.1016/j.microrel.2020.113632

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The thin-film-transistor (TFT) technology has attracted significant attention in account of the possibility to manufacture transistors on large and flexible substrates, at low processing temperatures and at a low cost. Next to the well-established amorphous silicon TFT technology used mostly for displays, the amorphous Indium-Gallium-Zinc-Oxide (IGZO) and Indium-Tin-Zinc-Oxide (ITZO) materials offer a higher current conductivity and thus a better performance. This makes them interesting candidates for TFT integrated circuits also beyond displays. However, integrated circuits can be easily damaged by electrostatic discharges (ESD) and require integrated protection solutions. To find possible vulnerabilities and solutions, this paper analyzes ESD robustness of two IGZO and one ITZO TFT device architecture.

引用

页数：8

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