Photoelectron spectroscopy of C3Si and C4Si2 anions

被引：15

作者：

Davico, GE

Schwartz, RL

Lineberger, WC ^{[1
]}

机构：

[1] Univ Colorado, JILA, Boulder, CO 80309 USA

[2] Natl Inst Stand & Technol, Boulder, CO 80309 USA

[3] Univ Colorado, Dept Chem & Biochem, Boulder, CO 80309 USA

来源：

JOURNAL OF CHEMICAL PHYSICS | 2001年 / 115卷 / 04期

关键词：

D O I：

10.1063/1.1380713

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The 364 nm photoelectron spectra of the linear C3Si- and C4Si2- anions are reported. Accurate adiabatic electron affinities are determined: EA((3)Sigma C3Si)=2.827 +/-0.007 eV and EA(C4Si2)=2.543 +/-0.006 eV. Several vibrational frequencies for both neutral molecules are also obtained. The term energy for the first linear excited state of C3Si (either (1)Delta or (1)Sigma) is 0.274 +/-0.015 eV. For C4Si2, the term energy is substantially lower than in C3Si and vibronic interactions between the two states become stronger. Experimental results are compared with high-level ab initio calculations for C3Si (see Rintelman and Gordon, following paper) and with our own calculations for C4Si2 and its anion. (C) 2001 American Institute of Physics.

引用

页码：1789 / 1794

页数：6

共 33 条

[31] Negative ion photoelectron spectroscopy studies of organic reactive intermediates [J].