Photoelectron spectroscopy of C3Si and C4Si2 anions

被引:15
作者
Davico, GE
Schwartz, RL
Lineberger, WC [1 ]
机构
[1] Univ Colorado, JILA, Boulder, CO 80309 USA
[2] Natl Inst Stand & Technol, Boulder, CO 80309 USA
[3] Univ Colorado, Dept Chem & Biochem, Boulder, CO 80309 USA
关键词
D O I
10.1063/1.1380713
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The 364 nm photoelectron spectra of the linear C3Si- and C4Si2- anions are reported. Accurate adiabatic electron affinities are determined: EA((3)Sigma C3Si)=2.827 +/-0.007 eV and EA(C4Si2)=2.543 +/-0.006 eV. Several vibrational frequencies for both neutral molecules are also obtained. The term energy for the first linear excited state of C3Si (either (1)Delta or (1)Sigma) is 0.274 +/-0.015 eV. For C4Si2, the term energy is substantially lower than in C3Si and vibronic interactions between the two states become stronger. Experimental results are compared with high-level ab initio calculations for C3Si (see Rintelman and Gordon, following paper) and with our own calculations for C4Si2 and its anion. (C) 2001 American Institute of Physics.
引用
收藏
页码:1789 / 1794
页数:6
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