A Novel Wideband 1-π Model with Accurate Substrate Modeling for On-Chip Spiral Inductors

被引：0

作者：

Zou, Huanhuan ^{[1
]}

Liu, Jun ^{[1
]}

Wen, Jincai ^{[1
]}

Wang, Huang ^{[1
]}

Sun, Lingling ^{[1
]}

Yu, Zhiping ^{[1
]}

机构：

[1] Hangzhou Dianzi Univ, Minist Educ, Key Lab RF Circuits & Syst, Hangzhou 310037, Zhejiang, Peoples R China

来源：

IEEE CUSTOM INTEGRATED CIRCUITS CONFERENCE 2010 | 2010年

关键词：

PI EQUIVALENT-CIRCUIT; PARAMETER EXTRACTION; INTEGRATED-CIRCUITS; BROAD-BAND; SILICON;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A novel wideband 1-pi equivalent circuit model for on-chip spiral inductors is presented. A substrate network, consisting of R/L/C, is proposed to model the broadband loss mechanisms in the silicon substrate. The skin and distributed effects for windings have been taken into account. A series of inductors with different geometries are fabricated in standard 0.18-mu m 1P6M RF CMOS process to verify the model. Excellent agreements have been obtained between the modeled and measured data up to 40 GHz, which verify that the proposed 1-pi model naturally has better wideband prediction capability than published 1-pi or T-models, and simpler topology than 2-pi models for on-chip spiral inductors.

引用

页数：4

共 42 条

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