Terahertz Radiation from Nonpolar InN Due to Drift in an Intrinsic In-Plane Electric Field

被引：17

作者：

Metcalfe, Grace D. ^{[1
]}

Shen, Hongen ^{[1
]}

Wraback, Michael ^{[1
]}

Koblmueller, Gregor ^{[2
,3
,4
]}

Gallinat, Chad ^{[1
,2
]}

Wu, Feng ^{[2
]}

Speck, James S. ^{[2
]}

机构：

[1] USA, Res Lab, Sensors & Elect Devices Directorate, RDRL SEE M, Adelphi, MD 20783 USA

[2] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

[3] Tech Univ Munich, Walter Schottky Inst, D-85748 Garching, Germany

[4] Tech Univ Munich, Dept Phys, D-85748 Garching, Germany

来源：

APPLIED PHYSICS EXPRESS | 2010年 / 3卷 / 09期

关键词：

D O I：

10.1143/APEX.3.092201

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A sinusoidal dependence of the s- and p-polarized terahertz (THz) emission on sample rotation angle in m- and a-plane InN has been observed using ultrafast pulse excitation at a moderate pump fluence of similar to 1 mu J/cm(2). The angular dependence is attributed to carrier drift in an intrinsic in-plane electric field parallel to the c-axis induced by stacking fault-terminated internal polarization at wurtzite domain boundaries, with a THz polarity flip corresponding to a reversal of the c-axis. The p-polarized THz signal also consists of an angular-independent component, similar to that from c-plane InN, consistent with surface normal transport due to the photo-Dember effect. (c) 2010 The Japan Society of Applied Physics

引用

页数：3

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