Magnetoresistance due to domain walls in micron scale Fe wires with stripe domains

被引：28
作者：
Kent, AD
Ruediger, U
Yu, J
Zhang, S
Levy, PM
Zhong, Y
Parkin, SSP
机构：
[1] NYU, Dept Phys, New York, NY 10003 USA
[2] CUNY City Coll, Dept Phys, New York, NY 10031 USA
[3] IBM Corp, Almaden Res Ctr, Div Res, San Jose, CA 95120 USA
来源：
IEEE TRANSACTIONS ON MAGNETICS | 1998年 / 34卷 / 04期
关键词：
domain walls; Fe; MR;
D O I：
10.1109/20.706305
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The magnetoresistance (MR) associated with domain boundaries has been investigated in microfabricated bcc Fe (0.65 to 20 mu m linewidth) wires with controlled stripe domains. Domain configurations have been characterized using MFM. MR measurements as a function of field angle, temperature and domain configuration are used to estimate MR contributions due to resistivity anisotropy and domain walls. Evidence is presented that domain boundaries enhance the conductivity in such microstructures over a broad range of temperatures (1.5 K to 80 K).
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收藏
页码：900 / 902
页数：3
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