Gas sensing properties of WO3 thin films deposited by rf sputtering

被引：32
作者：
Khatko, Viacheslav
Vallejos, Stella
Calderer, Josep
Llobet, Eduard
Vilanova, Xavier
Correig, Xavier
机构：
[1] Univ Rovira & Virgili, Dept Engn Elect, Tarragona 43007, Spain
[2] Univ Politecn Cataluna, Dept Engn Elect, Barcelona 08034, Spain
来源：
SENSORS AND ACTUATORS B-CHEMICAL | 2007年 / 126卷 / 02期
关键词：
WO3 thin film; deposition with interruptions; gas sensing properties;
D O I：
10.1016/j.snb.2007.03.031
中图分类号：
O65 [分析化学];
学科分类号：
070302 ; 081704 ;
摘要：
WO3 thin films were deposited by reactive radio frequency (rf) sputtering from a pure tungsten target. The deposition process was conducted with three interruptions and the interruption time was 30, 90 and 300 s. On the basis of these films, sensing layers were prepared and their responses to NO2, ammonia and ethanol were investigated. It was found that the sensing layers prepared with an interruption time of more than 90 s showed the best sensing properties. (C) 2007 Elsevier B.V. All rights reserved.
引用
收藏
页码：400 / 405
页数：6
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