Gas sensing properties of WO3 thin films deposited by rf sputtering

被引：32

作者：

Khatko, Viacheslav

Vallejos, Stella

Calderer, Josep

Llobet, Eduard

Vilanova, Xavier

Correig, Xavier

机构：

[1] Univ Rovira & Virgili, Dept Engn Elect, Tarragona 43007, Spain

[2] Univ Politecn Cataluna, Dept Engn Elect, Barcelona 08034, Spain

来源：

SENSORS AND ACTUATORS B-CHEMICAL | 2007年 / 126卷 / 02期

关键词：

WO3 thin film; deposition with interruptions; gas sensing properties;

D O I：

10.1016/j.snb.2007.03.031

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

WO3 thin films were deposited by reactive radio frequency (rf) sputtering from a pure tungsten target. The deposition process was conducted with three interruptions and the interruption time was 30, 90 and 300 s. On the basis of these films, sensing layers were prepared and their responses to NO2, ammonia and ethanol were investigated. It was found that the sensing layers prepared with an interruption time of more than 90 s showed the best sensing properties. (C) 2007 Elsevier B.V. All rights reserved.

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收藏

页码：400 / 405

页数：6

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