Two-dimensional (2D) layers like graphene are subject to long-wavelength fluctuations that manifest themselves as strong height fluctuations (ripples). In order to control the ripples, their relationship with external strain needs to be established. We therefore perform molecular dynamics (MD) of suspended graphene, by the use of a newly developed force field model (MMP) that we prove to be extremely accurate for both C Diamond and Graphene. The MMP potential successfully reproduces the energy of the a-bonds in both sp(3) and sp(2) configuration. Our MD simulations and experimental electron microscopy analysis reveal that ordered and static ripples form spontaneously as a direct response to external pressure. Furthermore the morphology of graphene and strain response of the crystal bonds differ depending on the particular directions where external pressure is present. Different regions of the strained graphene sheet are then investigated by tight-binding. Localised bandgap opening is reported for specific strain combinations, which also results in particular signatures in the phonon spectrum. Such controllable morphological changes can therefore provide a means to practically control and tune the electronic and transport properties of graphene for applications as optoelectronic and nanoelectromechanical devices. (C) 2015 The Authors. Published by Elsevier Ltd.
机构:
Russian Acad Sci, Inst Met Superplast Problems, Ufa 450001, RussiaRussian Acad Sci, Inst Met Superplast Problems, Ufa 450001, Russia
Baimova, Julia A.
Korznikova, Elena A.
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Russian Acad Sci, Inst Met Superplast Problems, Ufa 450001, RussiaRussian Acad Sci, Inst Met Superplast Problems, Ufa 450001, Russia
Korznikova, Elena A.
Dmitirev, Sergey V.
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Russian Acad Sci, Inst Met Superplast Problems, Ufa 450001, Russia
Natl Res Tomsk State Univ, Lenin St 36, Tomsk 634036, RussiaRussian Acad Sci, Inst Met Superplast Problems, Ufa 450001, Russia
机构:
King Khalid Univ, Fac Sci, Sci & Technol Unit, Dept Phys, Abha, Saudi ArabiaKing Khalid Univ, Fac Sci, Sci & Technol Unit, Dept Phys, Abha, Saudi Arabia
机构:
Shanghai Univ, E Inst Shanghai Univ, Shanghai Inst Appl Math & Mech, Shanghai Key Lab Mech Energy Engn,Div Modern Mech, Shanghai 200072, Peoples R ChinaShanghai Univ, E Inst Shanghai Univ, Shanghai Inst Appl Math & Mech, Shanghai Key Lab Mech Energy Engn,Div Modern Mech, Shanghai 200072, Peoples R China
机构:
Sichuan Univ, Inst Atom & Mol Phys, Chengdu 610065, Peoples R China
Ctr High Pressure Sci & Technol Adv Res HPSTAR, Shanghai 201203, Peoples R ChinaSichuan Univ, Inst Atom & Mol Phys, Chengdu 610065, Peoples R China
Yan, Xiaozhi
Dong, Haini
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Ctr High Pressure Sci & Technol Adv Res HPSTAR, Shanghai 201203, Peoples R China
Chinese Acad Sci, Inst Geochem, Key Lab High Temp & High Pressure Study Earths In, Guiyang 550081, Guizhou, Peoples R ChinaSichuan Univ, Inst Atom & Mol Phys, Chengdu 610065, Peoples R China
Dong, Haini
Li, Yanchun
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Chinese Acad Sci, Beijing Synchrotron Radiat Lab, Inst High Energy Phys, Beijing 100039, Peoples R ChinaSichuan Univ, Inst Atom & Mol Phys, Chengdu 610065, Peoples R China
Li, Yanchun
Lin, Chuanlong
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Carnegie Inst Washington, HPCAT, 9700 South Cass Ave, Argonne, IL 60439 USASichuan Univ, Inst Atom & Mol Phys, Chengdu 610065, Peoples R China
Lin, Chuanlong
Park, Changyong
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Carnegie Inst Washington, HPCAT, 9700 South Cass Ave, Argonne, IL 60439 USASichuan Univ, Inst Atom & Mol Phys, Chengdu 610065, Peoples R China
Park, Changyong
He, Duanwei
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Sichuan Univ, Inst Atom & Mol Phys, Chengdu 610065, Peoples R China
China Acad Engn Phys, Inst Fluid Phys, Mianyang 621900, Peoples R China
China Acad Engn Phys, Natl Key Lab Shockwave & Detonat Phys, Mianyang 621900, Peoples R ChinaSichuan Univ, Inst Atom & Mol Phys, Chengdu 610065, Peoples R China
He, Duanwei
Yang, Wenge
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Ctr High Pressure Sci & Technol Adv Res HPSTAR, Shanghai 201203, Peoples R China
Carnegie Inst Washington, High Pressure Synerget Consortium HPSynC, Geophys Lab, Argonne, IL 60439 USASichuan Univ, Inst Atom & Mol Phys, Chengdu 610065, Peoples R China