First-principles investigations of surface reconstructions of an InAs(111)B surface

被引:20
作者
Taguchi, A [1 ]
机构
[1] NTT Corp, NTT Basic Res Labs, Atsugi, Kanagawa 2430198, Japan
关键词
surface structure; molecular beam epitaxy; semiconducting indium compounds;
D O I
10.1016/j.jcrysgro.2004.12.065
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
We investigated the stable atomic configurations and surface reconstructions of InAs(l I I)B surface by first-principles calculations. We considered three kinds of surface reconstructions, which are full-coverage, As-vacancy, and As-trimer reconstructions. Although 1 x 1 periodicity has been observed in experiments, the present calculation results imply that clean surface has 2 x 2 periodicity. We also estimated relative stability of the reconstructions by taking account of the chemical potential of As. The obtained relative stability among the reconstructions is quite similar to that of the GaAs(111)B surface. The calculation results indicate that the As-trimer reconstruction is the most stable under high As-pressure condition. Although this reconstruction has not been observed, it would be found on the InAs(111)B surface, as on the GaAs(111)B surface. (c) 2005 Elsevier B.V. All rights reserved.
引用
收藏
页码:468 / 472
页数:5
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