Raman monitoring of ZnSe and ZnSxSe1-x nanocrystals formed in SiO2 by ion implantation

被引：4

作者：

Makhavikou, M. ^{[1
]}

Parkhomenko, I. ^{[2
]}

Vlasukova, L. ^{[2
]}

Komarov, F. ^{[1
]}

Milchanin, O. ^{[1
]}

Mudryi, A. ^{[3
]}

Zhivulko, V. ^{[3
]}

Wendler, E. ^{[4
]}

Togambayeva, A. ^{[5
]}

Korolik, O. ^{[2
]}

机构：

[1] AN Sevchenko Inst Appl Phys Problems, Kurchatov Str 7, Minsk 220045, BELARUS

[2] Belarusian State Univ, Nezavisimosti Ave 4, Minsk 220030, BELARUS

[3] Natl Acad Sci Belarus, Sci & Pract Mat Res Ctr, P Brovki Str 17, Minsk 220072, BELARUS

[4] Friedrich Schiller Univ Jena, Max Wien Pl 1, D-07743 Jena, Germany

[5] Al Farabi Kazakh Natl Univ, Al Parabi Ave 71, Alma Ata 050040, Kazakhstan

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2018年 / 435卷

关键词：

Amorphous SiO2; High-fluence implantation; ZnSe; ZnSxSe1-x; Raman scattering; Photoluminescence; OPTICAL-PROPERTIES; BEAM SYNTHESIS; NANOPARTICLES; MICROSTRUCTURE; SCATTERING; PHASE;

D O I：

10.1016/j.nimb.2018.05.010

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Structural and optical properties of SiO2 (600 nm)/Si films successively implanted with two types of ions (Zn and Se) or three types of ions (Zn, Se and S) and afterwards annealed at 900 degrees C were investigated. RS, PL and TEM methods were used to characterize A(2)B(6) nanocrystals synthesized in SiO2 matrix. The Raman spectra recorded using an excitation with two different laser lines (355 and 473 nm) have shown the formation of ZnSe nano-crystals after a double implantation of Zn and Se ions, while ZnSxSe1-x nanoclusters have been synthesized after a triple implantation of Zn, Se and S ions. Based on Raman spectra recorded with blue and UV excitations, the possible sulfur content (x approximate to 0.4) has been estimated for synthesized ternary alloy. The intensive PL bands for SiO2 films implanted with (Zn, Se, S) and (Zn, Se) were detected in the blue and red spectral ranges, respectively.

引用

页码：56 / 60

页数：5

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