Photoelectrochemical properties of nonpolar and semipolar GaN

被引：26

作者：

Fujii, Katsushi

Iwaki, Yasuhiro

Masui, Hisashi

Baker, Troy J.

Iza, Michael

Sato, Hitoshi

Kaeding, John

Yao, Takafumi

Speck, James S.

Denbaars, Steven P.

Nakamura, Shuji

Ohkawa, Kazuhiro

机构：

[1] Sci Univ Tokyo Grp, Japan Sci & Technol Agency, Nakamura Inhomogen Crystal Proj, Exploratory Res Adv Technol, Tokyo 162, Japan

[2] Tohoku Univ, Ctr Interdisplinary Res, Aoba Ku, Sendai, Miyagi 9808578, Japan

[3] Tohoku Univ, Inst Mat Res, Aoba Ku, Sendai, Miyagi 9808578, Japan

[4] Tokyo Univ Sci, Dept Appl Phys, Tokyo 16286021, Japan

[5] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

[6] Univ Calif Santa Barbara, Japan Sci & Technol Agency, Nakamura Inhomogen Crystal Proj, Exploratory Res Adv Technol, Santa Barbara, CA 93106 USA

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2007年 / 46卷 / 10A期

关键词：

gallium nitride; semiconductor-electrolyte contacts; photoelectrochemistry; nonpolar; semipolar; carrier transport;

D O I：

10.1143/JJAP.46.6573

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The photoelectrochemical and electrical properties of nonpolar (11 (2) over bar0)-oriented and semipolar (11 (2) over bar2)-oriented GaN were compared with those of (0001)-oriented GaN. Flatband potentials were obtained in the order of (11 (2) over bar0) < (0001) < (11 (2) over bar2). The highest photocurrent at a zero bias had been expected for the (11 (2) over bar0) sample considering the flatband potential, but the photocurrent of the (11 (2) over bar0) sample was the lowest among the three. This could have been due to the electric properties of the (11 (2) over bar0) sample used. The surface morphology changes indeed by the photoelectrochemical reactions are also discussed.

引用

页码：6573 / 6578

页数：6

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