共 9 条
Low-threshold current density 1.3-μm InAs quantum-dot lasers with the dots-in-a-well (DWELL) structure
被引:132
作者:

Stintz, A
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机构:
Univ New Mexico, Ctr High Technol Mat, Albuquerque, NM 87106 USA Univ New Mexico, Ctr High Technol Mat, Albuquerque, NM 87106 USA

Liu, GT
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Univ New Mexico, Ctr High Technol Mat, Albuquerque, NM 87106 USA Univ New Mexico, Ctr High Technol Mat, Albuquerque, NM 87106 USA

Li, H
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Univ New Mexico, Ctr High Technol Mat, Albuquerque, NM 87106 USA Univ New Mexico, Ctr High Technol Mat, Albuquerque, NM 87106 USA

Lester, LF
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h-index: 0
机构:
Univ New Mexico, Ctr High Technol Mat, Albuquerque, NM 87106 USA Univ New Mexico, Ctr High Technol Mat, Albuquerque, NM 87106 USA

Malloy, KJ
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Univ New Mexico, Ctr High Technol Mat, Albuquerque, NM 87106 USA Univ New Mexico, Ctr High Technol Mat, Albuquerque, NM 87106 USA
机构:
[1] Univ New Mexico, Ctr High Technol Mat, Albuquerque, NM 87106 USA
关键词:
1.3 mu m;
low threshold current lasers;
quantum dot lasers;
D O I:
10.1109/68.849053
中图分类号:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号:
0808 ;
0809 ;
摘要:
The wavelength of InAs quantum dots in an In-0.15 Ga0.85As quantum-well (DWELL) lasers grown on a GaAs substrate has been extended to 1.3-mu m. The quantum dot lasing wavelength is sensitive to growth conditions and sample thermal history resulting in blue shifts as much as 73 mn. The room temperature threshold current density is 42.6 A cm(-2) for 7.8-mm cavity length cleaved facet lasers under pulsed operation.
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页码:591 / 593
页数:3
相关论文
共 9 条
[1]
1.3 μm room-temperature GaAs-based quantum-dot laser
[J].
Huffaker, DL
;
Park, G
;
Zou, Z
;
Shchekin, OB
;
Deppe, DG
.
APPLIED PHYSICS LETTERS,
1998, 73 (18)
:2564-2566

Huffaker, DL
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Texas, Dept Elect & Comp Engn, Microelect Res Ctr, Austin, TX 78712 USA Univ Texas, Dept Elect & Comp Engn, Microelect Res Ctr, Austin, TX 78712 USA

Park, G
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Texas, Dept Elect & Comp Engn, Microelect Res Ctr, Austin, TX 78712 USA Univ Texas, Dept Elect & Comp Engn, Microelect Res Ctr, Austin, TX 78712 USA

Zou, Z
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Texas, Dept Elect & Comp Engn, Microelect Res Ctr, Austin, TX 78712 USA Univ Texas, Dept Elect & Comp Engn, Microelect Res Ctr, Austin, TX 78712 USA

Shchekin, OB
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Texas, Dept Elect & Comp Engn, Microelect Res Ctr, Austin, TX 78712 USA Univ Texas, Dept Elect & Comp Engn, Microelect Res Ctr, Austin, TX 78712 USA

Deppe, DG
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Texas, Dept Elect & Comp Engn, Microelect Res Ctr, Austin, TX 78712 USA Univ Texas, Dept Elect & Comp Engn, Microelect Res Ctr, Austin, TX 78712 USA
[2]
Optical characteristics of 1.24-μm InAs quantum-dot laser diodes
[J].
Lester, LF
;
Stintz, A
;
Li, H
;
Newell, TC
;
Pease, EA
;
Fuchs, BA
;
Malloy, KJ
.
IEEE PHOTONICS TECHNOLOGY LETTERS,
1999, 11 (08)
:931-933

Lester, LF
论文数: 0 引用数: 0
h-index: 0
机构:
Univ New Mexico, Ctr High Technol Mat, Albuquerque, NM 87106 USA Univ New Mexico, Ctr High Technol Mat, Albuquerque, NM 87106 USA

Stintz, A
论文数: 0 引用数: 0
h-index: 0
机构:
Univ New Mexico, Ctr High Technol Mat, Albuquerque, NM 87106 USA Univ New Mexico, Ctr High Technol Mat, Albuquerque, NM 87106 USA

Li, H
论文数: 0 引用数: 0
h-index: 0
机构:
Univ New Mexico, Ctr High Technol Mat, Albuquerque, NM 87106 USA Univ New Mexico, Ctr High Technol Mat, Albuquerque, NM 87106 USA

Newell, TC
论文数: 0 引用数: 0
h-index: 0
机构:
Univ New Mexico, Ctr High Technol Mat, Albuquerque, NM 87106 USA Univ New Mexico, Ctr High Technol Mat, Albuquerque, NM 87106 USA

Pease, EA
论文数: 0 引用数: 0
h-index: 0
机构:
Univ New Mexico, Ctr High Technol Mat, Albuquerque, NM 87106 USA Univ New Mexico, Ctr High Technol Mat, Albuquerque, NM 87106 USA

Fuchs, BA
论文数: 0 引用数: 0
h-index: 0
机构:
Univ New Mexico, Ctr High Technol Mat, Albuquerque, NM 87106 USA Univ New Mexico, Ctr High Technol Mat, Albuquerque, NM 87106 USA

Malloy, KJ
论文数: 0 引用数: 0
h-index: 0
机构:
Univ New Mexico, Ctr High Technol Mat, Albuquerque, NM 87106 USA Univ New Mexico, Ctr High Technol Mat, Albuquerque, NM 87106 USA
[3]
Extremely low room-temperature threshold current density diode lasers using InAs dots in In0.15Ga0.85As quantum well
[J].
Liu, GT
;
Stintz, A
;
Li, H
;
Malloy, KJ
;
Lester, LF
.
ELECTRONICS LETTERS,
1999, 35 (14)
:1163-1165

Liu, GT
论文数: 0 引用数: 0
h-index: 0
机构:
Univ New Mexico, Ctr High Technol Mat, Albuquerque, NM 87106 USA Univ New Mexico, Ctr High Technol Mat, Albuquerque, NM 87106 USA

Stintz, A
论文数: 0 引用数: 0
h-index: 0
机构:
Univ New Mexico, Ctr High Technol Mat, Albuquerque, NM 87106 USA Univ New Mexico, Ctr High Technol Mat, Albuquerque, NM 87106 USA

Li, H
论文数: 0 引用数: 0
h-index: 0
机构:
Univ New Mexico, Ctr High Technol Mat, Albuquerque, NM 87106 USA Univ New Mexico, Ctr High Technol Mat, Albuquerque, NM 87106 USA

Malloy, KJ
论文数: 0 引用数: 0
h-index: 0
机构:
Univ New Mexico, Ctr High Technol Mat, Albuquerque, NM 87106 USA Univ New Mexico, Ctr High Technol Mat, Albuquerque, NM 87106 USA

Lester, LF
论文数: 0 引用数: 0
h-index: 0
机构:
Univ New Mexico, Ctr High Technol Mat, Albuquerque, NM 87106 USA Univ New Mexico, Ctr High Technol Mat, Albuquerque, NM 87106 USA
[4]
1.3 mu m photoluminescence from InGaAs quantum dots on GaAs
[J].
Mirin, RP
;
Ibbetson, JP
;
Nishi, K
;
Gossard, AC
;
Bowers, JE
.
APPLIED PHYSICS LETTERS,
1995, 67 (25)
:3795-3797

Mirin, RP
论文数: 0 引用数: 0
h-index: 0
机构:
UNIV CALIF SANTA BARBARA,DEPT MAT,SANTA BARBARA,CA 93106 UNIV CALIF SANTA BARBARA,DEPT MAT,SANTA BARBARA,CA 93106

Ibbetson, JP
论文数: 0 引用数: 0
h-index: 0
机构:
UNIV CALIF SANTA BARBARA,DEPT MAT,SANTA BARBARA,CA 93106 UNIV CALIF SANTA BARBARA,DEPT MAT,SANTA BARBARA,CA 93106

Nishi, K
论文数: 0 引用数: 0
h-index: 0
机构:
UNIV CALIF SANTA BARBARA,DEPT MAT,SANTA BARBARA,CA 93106 UNIV CALIF SANTA BARBARA,DEPT MAT,SANTA BARBARA,CA 93106

Gossard, AC
论文数: 0 引用数: 0
h-index: 0
机构:
UNIV CALIF SANTA BARBARA,DEPT MAT,SANTA BARBARA,CA 93106 UNIV CALIF SANTA BARBARA,DEPT MAT,SANTA BARBARA,CA 93106

Bowers, JE
论文数: 0 引用数: 0
h-index: 0
机构:
UNIV CALIF SANTA BARBARA,DEPT MAT,SANTA BARBARA,CA 93106 UNIV CALIF SANTA BARBARA,DEPT MAT,SANTA BARBARA,CA 93106
[5]
1.3-μm CW lasing of InGaAs-GaAs quantum dots at room temperature with a threshold current of 8 mA
[J].
Mukai, K
;
Nakata, Y
;
Otsubo, K
;
Sugawara, M
;
Yokoyama, N
;
Ishikawa, H
.
IEEE PHOTONICS TECHNOLOGY LETTERS,
1999, 11 (10)
:1205-1207

Mukai, K
论文数: 0 引用数: 0
h-index: 0
机构:
Fujitsu Labs Ltd, Atsugi, Kanagawa 2430197, Japan Fujitsu Labs Ltd, Atsugi, Kanagawa 2430197, Japan

Nakata, Y
论文数: 0 引用数: 0
h-index: 0
机构:
Fujitsu Labs Ltd, Atsugi, Kanagawa 2430197, Japan Fujitsu Labs Ltd, Atsugi, Kanagawa 2430197, Japan

Otsubo, K
论文数: 0 引用数: 0
h-index: 0
机构:
Fujitsu Labs Ltd, Atsugi, Kanagawa 2430197, Japan Fujitsu Labs Ltd, Atsugi, Kanagawa 2430197, Japan

Sugawara, M
论文数: 0 引用数: 0
h-index: 0
机构:
Fujitsu Labs Ltd, Atsugi, Kanagawa 2430197, Japan Fujitsu Labs Ltd, Atsugi, Kanagawa 2430197, Japan

Yokoyama, N
论文数: 0 引用数: 0
h-index: 0
机构:
Fujitsu Labs Ltd, Atsugi, Kanagawa 2430197, Japan Fujitsu Labs Ltd, Atsugi, Kanagawa 2430197, Japan

Ishikawa, H
论文数: 0 引用数: 0
h-index: 0
机构:
Fujitsu Labs Ltd, Atsugi, Kanagawa 2430197, Japan Fujitsu Labs Ltd, Atsugi, Kanagawa 2430197, Japan
[6]
A narrow photoluminescence linewidth of 21 meV at 1.35 μm from strain-reduced InAs quantum dots covered by In0.2Ga0.8As grown on GaAs substrates
[J].
Nishi, K
;
Saito, H
;
Sugou, S
;
Lee, JS
.
APPLIED PHYSICS LETTERS,
1999, 74 (08)
:1111-1113

Nishi, K
论文数: 0 引用数: 0
h-index: 0
机构: NEC Corp Ltd, Optoelect & High Frequency Device Res Labs, Ibaraki, Osaka 3058501, Japan

Saito, H
论文数: 0 引用数: 0
h-index: 0
机构: NEC Corp Ltd, Optoelect & High Frequency Device Res Labs, Ibaraki, Osaka 3058501, Japan

Sugou, S
论文数: 0 引用数: 0
h-index: 0
机构: NEC Corp Ltd, Optoelect & High Frequency Device Res Labs, Ibaraki, Osaka 3058501, Japan

Lee, JS
论文数: 0 引用数: 0
h-index: 0
机构: NEC Corp Ltd, Optoelect & High Frequency Device Res Labs, Ibaraki, Osaka 3058501, Japan
[7]
1.3μm GaAs-based laser using quantum dots obtained by activated spinodal decomposition
[J].
Shernyakov, YM
;
Bedarev, DA
;
Kondrat'eva, EY
;
Kop'ev, PS
;
Kovsh, AR
;
Maleev, NA
;
Maximov, MV
;
Mikhrin, SS
;
Tsatsul'nikov, AF
;
Ustinov, VM
;
Volovik, BV
;
Zhukov, AE
;
Alferov, ZI
;
Ledentsov, NN
;
Bimberg, D
.
ELECTRONICS LETTERS,
1999, 35 (11)
:898-900

Shernyakov, YM
论文数: 0 引用数: 0
h-index: 0
机构: AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia

Bedarev, DA
论文数: 0 引用数: 0
h-index: 0
机构: AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia

Kondrat'eva, EY
论文数: 0 引用数: 0
h-index: 0
机构: AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia

Kop'ev, PS
论文数: 0 引用数: 0
h-index: 0
机构: AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia

Kovsh, AR
论文数: 0 引用数: 0
h-index: 0
机构: AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia

Maleev, NA
论文数: 0 引用数: 0
h-index: 0
机构: AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia

Maximov, MV
论文数: 0 引用数: 0
h-index: 0
机构: AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia

Mikhrin, SS
论文数: 0 引用数: 0
h-index: 0
机构: AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia

Tsatsul'nikov, AF
论文数: 0 引用数: 0
h-index: 0
机构: AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia

Ustinov, VM
论文数: 0 引用数: 0
h-index: 0
机构: AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia

Volovik, BV
论文数: 0 引用数: 0
h-index: 0
机构: AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia

Zhukov, AE
论文数: 0 引用数: 0
h-index: 0
机构: AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia

Alferov, ZI
论文数: 0 引用数: 0
h-index: 0
机构: AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia

Ledentsov, NN
论文数: 0 引用数: 0
h-index: 0
机构: AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia

Bimberg, D
论文数: 0 引用数: 0
h-index: 0
机构: AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia
[8]
InAs/InGaAs quantum dot structures on GaAs substrates emitting at 1.3 μm
[J].
Ustinov, VM
;
Maleev, NA
;
Zhukov, AE
;
Kovsh, AR
;
Egorov, AY
;
Lunev, AV
;
Volovik, BV
;
Krestnikov, IL
;
Musikhin, YG
;
Bert, NA
;
Kop'ev, PS
;
Alferov, ZI
;
Ledentsov, NN
;
Bimberg, D
.
APPLIED PHYSICS LETTERS,
1999, 74 (19)
:2815-2817

Ustinov, VM
论文数: 0 引用数: 0
h-index: 0
机构: Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia

Maleev, NA
论文数: 0 引用数: 0
h-index: 0
机构: Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia

Zhukov, AE
论文数: 0 引用数: 0
h-index: 0
机构: Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia

Kovsh, AR
论文数: 0 引用数: 0
h-index: 0
机构: Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia

Egorov, AY
论文数: 0 引用数: 0
h-index: 0
机构: Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia

Lunev, AV
论文数: 0 引用数: 0
h-index: 0
机构: Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia

Volovik, BV
论文数: 0 引用数: 0
h-index: 0
机构: Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia

Krestnikov, IL
论文数: 0 引用数: 0
h-index: 0
机构: Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia

Musikhin, YG
论文数: 0 引用数: 0
h-index: 0
机构: Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia

Bert, NA
论文数: 0 引用数: 0
h-index: 0
机构: Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia

Kop'ev, PS
论文数: 0 引用数: 0
h-index: 0
机构: Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia

Alferov, ZI
论文数: 0 引用数: 0
h-index: 0
机构: Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia

Ledentsov, NN
论文数: 0 引用数: 0
h-index: 0
机构: Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia

Bimberg, D
论文数: 0 引用数: 0
h-index: 0
机构: Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia
[9]
Photo- and electroluminescence in the 1.3-μm wavelength range from quantum-dot structures grown on GaAs substrates
[J].
Zhukov, AE
;
Kovsh, AR
;
Egorov, AY
;
Maleev, NA
;
Ustinov, VM
;
Volovik, BV
;
Maksimov, MV
;
Tsatsul'nikov, AF
;
Ledentsov, NN
;
Shernyakov, YM
;
Lunev, AV
;
Musikhin, YG
;
Bert, NA
;
Kop'ev, PS
;
Alferov, ZI
.
SEMICONDUCTORS,
1999, 33 (02)
:153-156

Zhukov, AE
论文数: 0 引用数: 0
h-index: 0
机构:
Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia

Kovsh, AR
论文数: 0 引用数: 0
h-index: 0
机构:
Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia

Egorov, AY
论文数: 0 引用数: 0
h-index: 0
机构:
Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia

Maleev, NA
论文数: 0 引用数: 0
h-index: 0
机构:
Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia

Ustinov, VM
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h-index: 0
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Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia

Volovik, BV
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机构:
Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia

Maksimov, MV
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h-index: 0
机构:
Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia

Tsatsul'nikov, AF
论文数: 0 引用数: 0
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Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia

Ledentsov, NN
论文数: 0 引用数: 0
h-index: 0
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Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia

Shernyakov, YM
论文数: 0 引用数: 0
h-index: 0
机构:
Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia

Lunev, AV
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h-index: 0
机构:
Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia

Musikhin, YG
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h-index: 0
机构:
Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia

Bert, NA
论文数: 0 引用数: 0
h-index: 0
机构:
Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia

Kop'ev, PS
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h-index: 0
机构:
Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia

Alferov, ZI
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h-index: 0
机构:
Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia