Low Temperature PE-TEOS Oxide Bonding Assisted by a Thin Layer of High-κ Dielectric

被引：17

作者：

Chong, G. Y. ^{[1
]}

Tan, C. S. ^{[1
]}

机构：

[1] Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore

来源：

ELECTROCHEMICAL AND SOLID STATE LETTERS | 2009年 / 12卷 / 11期

关键词：

aluminium compounds; dielectric materials; hafnium compounds; high-k dielectric thin films; plasma materials processing; surface energy; titanium compounds; wafer bonding;

D O I：

10.1149/1.3207872

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

The bond strength of plasma-enhanced tetraethyl-orthosilicate (PE-TEOS) oxide, bonded and annealed at low temperatures (300 degrees C and below), is enhanced using a thin layer of high-kappa dielectric at the bonding interface. Before bonding, various thin (similar to 5 nm) capping layers of high-kappa dielectrics (Al2O3, HfO2, and TiO2) are deposited separately on polished PE-TEOS wafers, followed by surface activation. After a 300 degrees C anneal in N-2 ambient for 3 h, the bond strength of wafer pairs bonded with PE-TEOS oxide is enhanced by 97.9, 73.3, and 31.0%, respectively, with TiO2, Al2O3, and HfO2 layers at the interface.

引用

页码：H408 / H411

页数：4

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