Properties of Nb- and Mo-modificated SrBi4Ti4O15 ferroelectric ceramics

被引:8
|
作者
Jin, Can
Zhu, Jun
Mao, Xiang-yu
He, Jun-hui
Shen, Jian-cang
Chen, Xiao-bing [1 ]
机构
[1] Yangzhou Univ, Coll Phys Sci & Technol, Yangzhou 225002, Peoples R China
[2] Nanjing Univ, Natl Lab Solid State Microstruct, Nanjing 210093, Peoples R China
关键词
ferroelectrics; solid-state reaction; remnant polarization; Curie temperature;
D O I
10.1080/10584580601085586
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
An investigation on the ferroelectric and dielectric properties of higher-valent-cations Nb- and Mo-modificated SrBi4Ti4O15 ceramics was presented. The ferroelectric property of SrBi4Ti4O15 was both obviously improved by niobium and molybdenum doping. The remnant polarization (2P(r)) of both Nb- and Mo-modificated SrBi4Ti4O15 increases at first, then decreases with further doping. As the doping content is 0.03 and 0.06 respectively, the 2P(r) maximizes at a value of 24.7 mu C/cm(2) and 26.5 mu C/cm(2), which is about twice larger than that of SrBi4Ti4O15. Meanwhile, the coercive field is increased less than 20% upon Nb and Mo substitution. The Curie temperature of the samples shifted hardly by Nb- and Mo-doping, which indicates that the good thermal stability of SrBi4Ti4O15 is not affected.
引用
收藏
页码:39 / 47
页数:9
相关论文
共 50 条
  • [21] Improved ferroelectric properties of SrBi4-0.1Pr0.1Ti4O15 thin films
    Cai, Hua
    Sun, Hui
    Fang, Hong
    Sun, Jia-Bao
    Chen, Xiao-Bing
    INTEGRATED FERROELECTRICS, 2007, 94 : 73 - 81
  • [22] Structural and electrical investigation of rare-earth doped lead-free SrBi4Ti4O15 ceramics
    Rajashekhar, G.
    Sreekanth, T.
    INDIAN JOURNAL OF PHYSICS, 2024, 98 (09) : 3243 - 3250
  • [23] Effect of K content to lead-free SrBi4Ti4O15–(Na0.5Bi0.5)Bi4Ti4O15 piezoelectric ceramics
    Na Li
    Weibing Ma
    Xiangrong Zang
    Yanyun Wang
    Jingdong Guo
    Huaidang Zhao
    Minjie Ma
    Journal of Materials Science: Materials in Electronics, 2016, 27 : 12473 - 12478
  • [24] Mechanochemical activation assisted synthesis of bismuth layered-perovskite SrBi4Ti4O15
    P. Ferrer
    J. E. Iglesias
    A. Castro
    Journal of Materials Science, 2004, 39 : 5299 - 5303
  • [25] Selective orientation of SrBi4Ti4O15 thin films grown on buffered Si(100) substrates
    T. L. Chen
    X. M. Li
    G. R. Li
    W. D. Yu
    Journal of Electroceramics, 2008, 21 : 657 - 658
  • [26] Selective orientation of SrBi4Ti4O15 thin films grown on buffered Si(100) substrates
    Chen, T. L.
    Li, X. M.
    Li, G. R.
    Yu, W. D.
    JOURNAL OF ELECTROCERAMICS, 2008, 21 (1-4) : 657 - 658
  • [27] La3+ substitution in four-layers Aurivillius phase SrBi4Ti4O15
    Hou, RZ
    Chen, XM
    SOLID STATE COMMUNICATIONS, 2004, 130 (07) : 469 - 472
  • [28] Upconversion luminescence and ferroelectric properties of Er3+ doped Bi4Ti3O12-SrBi4Ti4O15
    Wei, T.
    Li, C. P.
    Zhou, Q. J.
    Zou, Y. L.
    Zhang, L. S.
    MATERIALS LETTERS, 2014, 118 : 92 - 95
  • [29] Dielectric properties of Bi4Ti3O12-SrBi4Ti4O15 intergrowth ceramics synthesized by a modified oxalate route
    Parida, Geetanjali
    Bera, J.
    PHASE TRANSITIONS, 2014, 87 (05) : 452 - 459
  • [30] Notable enlargement of remnant polarization for fatigue-free SrBi4Ti4O15 thin films by La-substitution
    Hui Sun
    Xiao-Bing Chen
    Jun Zhu
    Jun-Hui He
    Ya-Feng Qian
    Hong Fang
    Journal of Sol-Gel Science and Technology, 2007, 43 : 125 - 129