Reviewing polycrystalline mercuric iodide X-ray detectors

被引:50
作者
Schieber, M. [1 ]
Zuck, A.
Gilboa, H.
Zentai, G.
机构
[1] Hebrew Univ Jerusalem, Div Appl Phys, IL-91904 Jerusalem, Israel
[2] Real Time Radiog, IL-91487 Jerusalem, Israel
[3] Ginzton Technol Ctr, Varian Med Syst, Mountain View, CA 94043 USA
关键词
mercuric iodide; polycrystalline semiconductors; X-ray detectors; X-ray imaging;
D O I
10.1109/TNS.2006.877043
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Polycrystalline films of HgI2, which are used as nuclear radiation detectors, are fabricated by two different methods, either by Physical Vapor Deposition (PVD) or glued with a polymeric binder called also "Particle in Binder" (PIB). Both types of PVD or PIB Detectors are deposited directly on Thin Film Transistor TFT technology imagers and can be used for X-ray imaging. The present review is concentrated on PVD- Polycrystalline-HgI2. However, the main review body is a summary of the work performed by RTR, HU, and Varian. Works by other groups are mentioned briefly. The PVD process is explained by reviewing X-ray Diffraction (XRD) and Scanning Electron Microscope (SEM) data. The charge transport properties of the PVD-Polycrystalline HgI2 detectors as they improved with R&D efforts are shown. The response of these PVD detectors to Am-241 and Co-57 gamma rays and their X-ray imaging properties such as dark currents, sensitivity, imaging resolution and Detector Quantum Efficiency (DQE) are reviewed.
引用
收藏
页码:2385 / 2391
页数:7
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