Directional interlayer spin-valley transfer in two-dimensional heterostructures

被引:107
|
作者
Schaibley, John R. [1 ]
Rivera, Pasqual [1 ]
Yu, Hongyi [2 ,3 ]
Seyler, Kyle L. [1 ]
Yan, Jiaqiang [4 ,5 ]
Mandrus, David G. [4 ,5 ,6 ]
Taniguchi, Takashi [7 ]
Watanabe, Kenji [7 ]
Yao, Wang [2 ,3 ]
Xu, Xiaodong [1 ,8 ]
机构
[1] Univ Washington, Dept Phys, Seattle, WA 98195 USA
[2] Univ Hong Kong, Dept Phys, Hong Kong, Hong Kong, Peoples R China
[3] Univ Hong Kong, Ctr Theoret & Computat Phys, Hong Kong, Hong Kong, Peoples R China
[4] Oak Ridge Natl Lab, Div Mat Sci & Technol, Oak Ridge, TN 37831 USA
[5] Univ Tennessee, Dept Mat Sci & Engn, Knoxville, TN 37996 USA
[6] Univ Tennessee, Dept Phys & Astron, Knoxville, TN 37996 USA
[7] Natl Inst Mat Sci, Adv Mat Lab, Tsukuba, Ibaraki 3050044, Japan
[8] Univ Washington, Dept Mat Sci & Engn, Seattle, WA 98195 USA
来源
NATURE COMMUNICATIONS | 2016年 / 7卷
关键词
TRANSITION-METAL DICHALCOGENIDES; MONOLAYER WSE2; ELECTRICAL CONTROL; EXCITON DYNAMICS; SEMICONDUCTOR; POLARIZATION; GENERATION; MOS2/WS2;
D O I
10.1038/ncomms13747
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
Van der Waals heterostructures formed by two different monolayer semiconductors have emerged as a promising platform for new optoelectronic and spin/valleytronic applications. In addition to its atomically thin nature, a two-dimensional semiconductor heterostructure is distinct from its three-dimensional counterparts due to the unique coupled spin-valley physics of its constituent monolayers. Here, we report the direct observation that an optically generated spin-valley polarization in one monolayer can be transferred between layers of a two-dimensional MoSe2-WSe2 heterostructure. Using non-degenerate optical circular dichroism spectroscopy, we show that charge transfer between two monolayers conserves spin-valley polarization and is only weakly dependent on the twist angle between layers. Our work points to a new spin-valley pumping scheme in nanoscale devices, provides a fundamental understanding of spin-valley transfer across the two-dimensional interface, and shows the potential use of two-dimensional semiconductors as a spin-valley generator in two-dimensional spin/valleytronic devices for storing and processing information.
引用
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页数:6
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