1.3-μm InAs quantum-dot micro-disk lasers on V-groove patterned and unpatterned (001) silicon

被引：39

作者：

Li, Qiang ^{[1
]}

Wan, Yating ^{[1
]}

Liu, Alan Y. ^{[2
]}

Gossard, Arthur C. ^{[2
]}

Bowers, John E. ^{[2
,3
]}

Hu, Evelyn L. ^{[4
]}

Lau, Kei May ^{[1
]}

机构：

[1] Hong Kong Univ Sci & Technol, Dept Elect & Comp Engn, Kowloon, Hong Kong, Peoples R China

[2] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

[3] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

[4] Harvard Univ, Sch Engn & Appl Sci, Cambridge, MA 02138 USA

来源：

OPTICS EXPRESS | 2016年 / 24卷 / 18期

关键词：

SI; PHOTONICS;

D O I：

10.1364/OE.24.021038

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We report comparison of lasing dynamics in InAs quantum dot ( QD) micro-disk lasers ( MDLs) monolithically grown on V-groove patterned and planar Si ( 001) substrates. TEM characterizations reveal abrupt interfaces and reduced threading dislocations in the QD active regions when using the GaAs-on-V-grooved-Si template. The improved crystalline quality translates into lower threshold power in the optically pumped continuous-wave MDLs. Concurrent evaluations were also made with devices fabricated simultaneously on lattice-matched GaAs substrates. Lasing behaviors from 10 K up to room temperature have been studied systematically. The analyses spotlight insights into the optimal epitaxial scheme to achieve low-threshold lasing in telecommunication wavelengths on exact Si ( 001) substrates. (C) 2016 Optical Society of America

引用

页码：21038 / 21045

页数：8

共 22 条

[1]

Alcotte R., APL MAT, V4

[2] Anti-phase boundaries-Free GaAs epilayers on "quasi-nominal" Ge-buffered silicon substrates [J].

Bogumilowicz, Y. ;

Hartmann, J. M. ;

Cipro, R. ;

Alcotte, R. ;

Martin, M. ;

Bassani, F. ;

Moeyaert, J. ;

Baron, T. ;

Pin, J. B. ;

Bao, X. ;

Ye, Z. ;

Sanchez, E. .

APPLIED PHYSICS LETTERS, 2015, 107 (21)

[3]

Bowers J.E., 2014, OFC 2014, P1

[4]

Chen SM, 2016, NAT PHOTONICS, V10, P307, DOI [10.1038/NPHOTON.2016.21, 10.1038/nphoton.2016.21]

[5] Continuous-wave InAs/GaAs quantum-dot laser diodes monolithically grown on Si substrate with low threshold current densities [J].

Lee, Andrew ;

Jiang, Qi ;

Tang, Mingchu ;

Seeds, Alwyn ;

Liu, Huiyun .

OPTICS EXPRESS, 2012, 20 (20) :22181-22187

[6]

Li Q., IEEE T ELECT DEV, V60, P4112

[7] Growing antiphase-domain-free GaAs thin films out of highly ordered planar nanowire arrays on exact (001) silicon [J].

Li, Qiang ;

Ng, Kar Wei ;

Lau, Kei May .

APPLIED PHYSICS LETTERS, 2015, 106 (07)

[8] Growth of ultra-high mobility In0.52Al0.48As/InxGa1-xAs (x ≥ 53%) quantum wells on Si substrates using InP/GaAs buffers by metalorganic chemical vapor deposition [J].

Li, Qiang ;

Tang, Chak Wah ;

Lau, Kei May .

APPLIED PHYSICS EXPRESS, 2014, 7 (04)

[9]

Liang D, 2010, NAT PHOTONICS, V4, P511, DOI [10.1038/NPHOTON.2010.167, 10.1038/nphoton.2010.167]

[10] Quantum dot lasers for silicon photonics [Invited] [J].

Liu, Alan Y. ;

Srinivasan, Sudharsanan ;

Norman, Justin ;

Gossard, Arthur C. ;

Bowers, John E. .

PHOTONICS RESEARCH, 2015, 3 (05) :B1-B9

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