Hydrogen-dependent low frequency noise and its physical mechanism of HfO2 resistance change random access memory

被引：5

作者：

Chen, Y. Q. ^{[1
]}

Liu, X. ^{[1
]}

Liu, Y. ^{[1
]}

Peng, C. ^{[1
]}

Fang, W. X. ^{[1
]}

En, Y. F. ^{[1
]}

Huang, Y. ^{[1
]}

机构：

[1] Minist Ind & Informat Technol, Elect Res Inst 5, Sci & Technol Reliabil Phys & Applicat Elect Comp, Guangzhou 510610, Guangdong, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2017年 / 111卷 / 23期

关键词：

DEVICES; RELIABILITY; PERFORMANCE; DEGRADATION; TOOL;

D O I：

10.1063/1.4997397

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effect of hydrogen on low frequency noise characteristics of HfO2 resistance change random access memories (RRAMs) was investigated in this paper. The experimental results show that HfO2 RRAMs after hydrogen treatment take on the better uniformity of switch characteristics and the conduction enhancement behavior. Furthermore, it was found that the low frequency noise characteristics of the HfO2 RRAMs was significantly impacted by the hydrogen treatment, and at three kinds of typical resistance states, the low frequency noises of the HfO2 RRAMs after hydrogen treatment are larger than those of the fresh HfO2 RRAMs. The mechanism could be attributed to H induced oxygen vacancies, which serve as the additional traps for conduction due to the trap-assisted tunneling process. This will result in more random trap/detrap processes in the conducting filament, which gives rise to the larger low frequency noise in the HfO2 RRAMs. The results of this study may be useful in the design and application of HfO2 RRAMs. Published by AIP Publishing.

引用

页数：5

共 28 条

[1]

Bersuker G., 2010, EL DEV M IEDM

[2]

Chen Y. S., 2009, EL DEV M IEDM

[3] Hydrogen-Induced Resistive Switching in TiN/ALD HfO2/PEALD TiN RRAM Device [J].

Chen, Yang Yin ;

Goux, L. ;

Swerts, J. ;

Toeller, M. ;

Adelmann, C. ;

Kittl, J. ;

Jurczak, M. ;

Groeseneken, G. ;

Wouters, D. J. .

IEEE ELECTRON DEVICE LETTERS, 2012, 33 (04) :483-485

[4] An Ultrathin Forming-Free HfOx Resistance Memory With Excellent Electrical Performance [J].

Chen, Yu-Sheng ;

Lee, Heng-Yuan ;

Chen, Pang-Shiu ;

Wu, Tai-Yuan ;

Wang, Ching-Chiun ;

Tzeng, Pei-Jer ;

Chen, Frederick ;

Tsai, Ming-Jinn ;

Lien, Chenhsin .

IEEE ELECTRON DEVICE LETTERS, 2010, 31 (12) :1473-1475

[5] Low-frequency noise measurements as a characterization tool for degradation phenomena in solid-state devices [J].

Ciofi, C ;

Neri, B .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2000, 33 (21) :R199-R216

[6] Hydrogen doping in HfO2 resistance change random access memory [J].

Duncan, D. ;

Magyari-Koepe, B. ;

Nishi, Y. .

APPLIED PHYSICS LETTERS, 2016, 108 (04)

[7] LOW-FREQUENCY FLUCTUATIONS IN SOLIDS - 1-F NOISE [J].

DUTTA, P ;

HORN, PM .

REVIEWS OF MODERN PHYSICS, 1981, 53 (03) :497-516

[8] Reliability degradation of thin HfO2/SiO2 gate stacks by remote RF hydrogen and deuterium plasma treatment [J].

Efthymiou, E. ;

Bernardini, S. ;

Zhang, J. F. ;

Volkos, S. N. ;

Hamilton, B. ;

Peaker, A. R. .

THIN SOLID FILMS, 2008, 517 (01) :207-208

[9] 1/f Noise and Defects in Microelectronic Materials and Devices [J].

Fleetwood, D. M. .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2015, 62 (04) :1462-1486

[10] H-treatment impact on conductive-filament formation and stability in Ta2O5-based resistive-switching memory cells [J].

Goux, L. ;

Kim, J. Y. ;

Magyari-Kope, B. ;

Nishi, Y. ;

Redolfi, A. ;

Jurczak, M. .

JOURNAL OF APPLIED PHYSICS, 2015, 117 (12)

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