GaN-Based Metal-Insulator-Semiconductor High-Electron-Mobility Transistors Using Low-Pressure Chemical Vapor Deposition SiNx as Gate Dielectric

被引：90

作者：

Hua, Mengyuan ^{[1
]}

Liu, Cheng ^{[1
]}

Yang, Shu ^{[1
]}

Liu, Shenghou ^{[1
]}

Fu, Kai ^{[2
]}

Dong, Zhihua ^{[2
]}

Cai, Yong ^{[2
]}

Zhang, Baoshun ^{[1
]}

Chen, Kevin J. ^{[1
]}

机构：

[1] Univ Hong Kong, Dept Elect & Comp Engn, Hong Kong, Hong Kong, Peoples R China

[2] Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Suzhou 200051, Peoples R China

来源：

IEEE ELECTRON DEVICE LETTERS | 2015年 / 36卷 / 05期

关键词：

Gallium nitride; MIS-HEMT; LPCVD; silicon nitride; gate dielectric; MIS-HEMT;

D O I：

10.1109/LED.2015.2409878

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this letter, silicon nitride (SiNx) film deposited at 780 degrees C by low-pressure chemical vapor deposition (LPCVD) was employed as gate dielectric for GaN-based metal-insulator-semiconductor high-electron-mobility transistors. The LPCVD-SiNx exhibit improved gate dielectric performance than the plasma enhanced chemical vapor deposition-SiNx, including smaller forward and reverse gate leakage, and higher forward gate breakdown voltage.

引用

页码：448 / 450

页数：3

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