Growth-temperature-dependent bandgap of MBE-grown GaInNAs epilayers lattice matched to GaAs

被引：0

作者：

Pavelescu, EM ^{[1
]}

Wagner, J ^{[1
]}

Kudrawiec, R ^{[1
]}

Dumitrescu, M ^{[1
]}

Konttinen, J ^{[1
]}

Dhaka, VDS ^{[1
]}

Lemmetyinen, H ^{[1
]}

Pessa, M ^{[1
]}

机构：

[1] Tampere Univ Technol, Optoelect Res Ctr, FIN-33101 Tampere, Finland

来源：

2005 International Conference on Indium Phosphide and Related Materials | 2005年

关键词：

MOLECULAR-BEAM EPITAXY; GAP;

D O I：

暂无

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

We have observed that the bandgap of lattice-matched GaInNAs-on-GaAs epilayers, grown by molecular beam epitaxy under constant fluxes, noticeably increases as growth temperature increases within the 410-470 degrees C range. The increase in the band gap with increasing growth temperature has been found to be due to a decrease in the substitutional nitrogen content as well as to an enhancement in the amount of N-Ga3In clusters relative to the N-Ga-4 ones.

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页码：540 / 542

页数：3

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