Room temperature ferromagnetism and red shift of band gap in (Mn2+, Mg2+) co-doped ZnO nanoparticles

被引:5
作者
Satheesan, M. K. [1 ]
Kumar, Viswanathan [2 ]
机构
[1] Kannur Univ, Sch Chem Sci, Dept Chem, Kannur, Kerala, India
[2] Govt India, Ctr Mat Elect Technol C MET, Minist Elect & Informat Technol, Athani PO, Trichur 680581, Kerala, India
关键词
MAGNETIC-PROPERTIES; ENERGY-GAP; THIN-FILMS; DEFECTS; SEMICONDUCTORS; EXCHANGE; LI;
D O I
10.1007/s10854-017-7697-5
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this study we report, for the first time, room temperature ferromagnetism in (Zn1-xMgxMn0.01)O nanoparticles having Mg concentration in the range 0 < x < 0.10 prepared by sol-gel method. It is observed that the room temperature ferromagnetic ordering varies with Mg concentration. Compared with Mn-doped ZnO (Zn0.99Mn0.01O) nanoparticles, the (Mn, Mg) co-doped ZnO nanoparticles exhibit decreased room temperature ferromagnetism. This study also reports the balance of the two competing effects from the blue shift of band gap as a result of Mg doping and sp-d ferromagnetic exchange interaction leading to red-shift of band-gap.
引用
收藏
页码:17601 / 17605
页数:5
相关论文
共 35 条
[11]   Room-temperature ferromagnetism in MgO nanocrystalline powders [J].
Hu, Jifan ;
Zhang, Zhongli ;
Zhao, Ming ;
Qin, Hongwei ;
Jiang, Minhua .
APPLIED PHYSICS LETTERS, 2008, 93 (19)
[12]   Possibility of room-temperature multiferroism in Mg-doped ZnO [J].
Kumar, Parmod ;
Kumar, Yogesh ;
Malik, Hitendra K. ;
Annapoorni, S. ;
Gautam, Sanjeev ;
Chae, Keun Hwa ;
Asokan, K. .
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2014, 114 (02) :453-457
[13]   Strong correlation between oxygen vacancy and ferromagnetism in Yb-doped ZnO thin films [J].
Li, Fei ;
Liu, Xue-Chao ;
Zhou, Ren-Wei ;
Chen, Hong-Ming ;
Zhuo, Shi-Yi ;
Shi, Er-Wei .
JOURNAL OF APPLIED PHYSICS, 2014, 116 (24)
[14]   Sol-gel derived (Li, Mg):: ZnO films with high c-axis orientation and electrical resistivity [J].
Liu, J ;
Weng, WJ ;
Ding, WH ;
Cheng, K ;
Du, PY ;
Shen, G ;
Han, GR .
SURFACE & COATINGS TECHNOLOGY, 2005, 198 (1-3) :274-277
[15]   Advances in methods to obtain and characterise room temperature magnetic ZnO [J].
Lorite, I. ;
Straube, B. ;
Ohldag, H. ;
Kumar, P. ;
Villafuerte, M. ;
Esquinazi, P. ;
Rodriguez Torres, C. E. ;
Perez de Heluani, S. ;
Antonov, V. N. ;
Bekenov, L. V. ;
Ernst, A. ;
Hoffmann, M. ;
Nayak, S. K. ;
Adeagbo, W. A. ;
Fischer, G. ;
Hergert, W. .
APPLIED PHYSICS LETTERS, 2015, 106 (08)
[16]  
Mahadeva S. K., 2013, MAT RES SOC S P, V1577
[17]   Ferromagnetism in Mn-implanted ZnO:Sn single crystals [J].
Norton, DP ;
Pearton, SJ ;
Hebard, AF ;
Theodoropoulou, N ;
Boatner, LA ;
Wilson, RG .
APPLIED PHYSICS LETTERS, 2003, 82 (02) :239-241
[18]   Making nonmagnetic semiconductors ferromagnetic [J].
Ohno, H .
SCIENCE, 1998, 281 (5379) :951-956
[19]   Ferroelectric properties in piezoelectric semiconductor Zn1-xMxO (M=Li, Mg) [J].
Onodera, A ;
Tamaki, N ;
Jin, K ;
Yamashita, H .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1997, 36 (9B) :6008-6011
[20]   Effect of Mn doping on the electric and dielectric properties of ZnO epitaxial films [J].
Oshio, T. ;
Masuko, K. ;
Ashida, A. ;
Yoshimura, T. ;
Fujimura, N. .
JOURNAL OF APPLIED PHYSICS, 2008, 103 (09)