Electrical resistivity in filled skutterudite LaxRh4As12 at high pressures

被引：2

作者：

Arii, K. ^{[1
]}

Takahashi, H. ^{[1
,2
]}

Okada, H. ^{[2
]}

Takahashi, H. ^{[1
,2
]}

Imai, M. ^{[3
]}

Aoyagi, T. ^{[3
]}

Kimura, T. ^{[3
]}

Sekine, C. ^{[4
]}

Hayashi, J. ^{[4
]}

Hoshi, N. ^{[4
]}

Shirotani, I. ^{[4
]}

机构：

[1] Nihon Univ, Grad Sch Integrated Basic Sci, Setagaya Ku, Tokyo 1568550, Japan

[2] Nihon Univ, Coll Humanities & Sci, Setagaya Ku, Tokyo 1568550, Japan

[3] Natl Inst Mat Sci, Tsukuba, Ibaraki 3050047, Japan

[4] Muroran Inst Technol, Dept Elect & Elect Engn, Muroran, Hokkaido 0508585, Japan

来源：

INTERNATIONAL CONFERENCE ON HIGH PRESSURE SCIENCE AND TECHNOLOGY, JOINT AIRAPT-22 AND HPCJ-50 | 2010年 / 215卷

关键词：

CRYSTAL-STRUCTURE; SUPERCONDUCTIVITY;

D O I：

10.1088/1742-6596/215/1/012032

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

A filled skutterudite La0.48Rh4As12 was synthesized at 4 GPa and 1220 K. La0.48Rh4As12 is a semiconductor with a energy gap of 0.03 eV at ambient pressure. Electrical resistance measurements at low temperatures and high pressures have indicated that La0.48Rh4As12 is a semiconductor even at 20.0 GPa although a temperature change in the resistivity becomes small with pressure.

引用

页数：4

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