Characterization and hydrogen gas sensing performance of Al-doped ZnO thin films synthesized by low energy plasma focus device

被引:17
作者
Hosseinnejad, Mohammad Taghi [1 ]
Ghoranneviss, Mahmood [1 ]
Hantehzadeh, Mohammad Reza [1 ]
Darabi, Elham [1 ]
机构
[1] Islamic Azad Univ, Sci & Res Branch, Plasma Phys Res Ctr, Tehran, Iran
关键词
Plasma focus; Pulsed ion beam ablation; AZO; H-2 gas sensing; ROOM-TEMPERATURE; DIMETHYL METHYLPHOSPHONATE; SENSOR; FABRICATION; DEPOSITION; ABLATION; NANORODS; ACETONE;
D O I
10.1016/j.jallcom.2016.08.042
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Nanocrystalline Al-doped ZnO (AZO) thin films were deposited on glass substrates at room temperature by Mather-type plasma focus device using a ZnO target with an Al content of 3 wt%. The effect of number of focus shots on the microstructure, elemental composition, surface morphology and H-2 gas sensor performance of AZO deposited thin films were investigated. X-ray diffraction (XRD) analysis confirmed the polycrystalline nature of the all deposited AZO thin films. XRD results also indicated strong dependence of crystallinity and crystallite size of deposited thin films on number of focus shots. Scanning electron microscopy (SEM) and atomic force microscopy (AFM) analyses led to the conclusion that the size of grains/clusters on the surface of thin films and the surface roughness of deposited samples enhance with increasing of focus shots. The experiments and measurements involving the AZO deposited thin films towards hydrogen were carried out at different operating temperatures within 150-400 degrees C for various concentrations of hydrogen in air. The H-2 sensing response enhanced with concentration and operating temperature, and reached its maximum at 300 degrees C-1000 ppm concentration of hydrogen gas. The results also indicated shorter response times for samples deposited with less focus shots. (C) 2016 Elsevier B. V. All rights reserved.
引用
收藏
页码:740 / 750
页数:11
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