A Low-Power, High-Sensitivity Injection-Locked Oscillator for 60 GHz WPAN Applications

被引：0

作者：

Li, Xia ^{[1
]}

Baltus, Peter ^{[1
]}

van Zeijl, Paul ^{[2
]}

Milosevic, Dusan ^{[1
]}

van Roermund, Arthur ^{[1
]}

机构：

[1] Eindhoven Univ Technol, NL-5600 MB Eindhoven, Netherlands

[2] Philips Res Eindhoven, Elect Syst & Silicon Integrat, Eindhoven, Netherlands

来源：

2009 ASIA PACIFIC CONFERENCE ON POSTGRADUATE RESEARCH IN MICROELECTRONICS AND ELECTRONICS (PRIMEASIA 2009) | 2009年

关键词：

60; GHz; WPAN; Low Power; CMOS; injection locking; self-demodulating; LOCKING;

D O I：

10.1109/PRIMEASIA.2009.5397421

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This article presents a 60 GHz low-power injection-locked oscillator in TSMC 65 nm technology. By using the frequency sweeping technique, a simulated 7 GHz total locking range is achieved, which covers the entire 60 GHz ISM band. The simulated settling time is less than 2 ns for each sweeping step with -60 dBm injection power. The DC power consumption is 1 mW of the oscillator core, and 5 mW in total for the input and output buffers, which are mainly used for the matching purpose.

引用

页码：161 / +

页数：2

共 11 条

[1]

CAP CH, 2007, IEEE J SOLID-ST CIRC, V42, P1649

[2]

CHEE YH, IEEE CUST INT CIRC C

[3]

HSU WL, 2008, MICROWAVE OPTICAL TE, V50

[4]

INUI C, P AS PAC MICR C 2007, P793

[5]

Kinget P., IEEE J SOLID STATE C, V37, P845

[6]

Li Xia, P 2009 IEEE RAD WIR

[7]

MONSON H, 2009, BLUETOOTH TECHNOLOGY

[8]

Niknejad AM, 2008, INTEGR CIRCUIT SYST, P1, DOI 10.1007/978-0-387-76561-7

[9]

PARK C, 2007 IEEE WIR COMM, P70

[10] A study of injection locking and pulling in oscillators [J].

Razavi, B .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2004, 39 (09) :1415-1424

← 1 2 →