Atomic layer stack deposition-annealing synthesis of CuWO4

被引：68

作者：

Gao, Yuan ^{[1
]}

Zandi, Omid ^{[1
]}

Hamann, Thomas W. ^{[1
]}

机构：

[1] Michigan State Univ, Dept Chem, 578 S Shaw Lane, E Lansing, MI 48824 USA

来源：

JOURNAL OF MATERIALS CHEMISTRY A | 2016年 / 4卷 / 08期

基金：

美国国家科学基金会;

关键词：

THIN-FILMS; COPPER TUNGSTATE; WATER OXIDATION; GROWTH; PHOTOANODES; PERFORMANCE; DISSOLUTION; CATALYSTS; BEHAVIOR; CUO;

D O I：

10.1039/c5ta06899a

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

A stack deposition-annealing (SDA) approach was demonstrated for the synthesis of CuWO4 via atomic layer deposition (ALD). The resulted CuWO4 showed promising activity as a photoanode for photoelectrochemical (PEC) water splitting. This methodology can, in principal, be utilized for the ALD ofmany ternary and quaternary oxides for various applications.

引用

页码：2826 / 2830

页数：5

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