A 55-dB dynamic range wideband RF logarithmic power detector with temperature and DC offset compensation

被引:1
作者
Jiang, Yingdan [1 ,2 ]
Liu, Xuelian [2 ]
Zhang, Qinfeng [2 ]
Su, Xiaobo [2 ,3 ]
Yu, Zongguang [1 ,2 ]
Zhang, Hong [4 ]
机构
[1] Nanjing Univ, Sch Elect Sci & Engn, Nanjing 210093, Peoples R China
[2] 58th Res Inst China Elect Technol Grp Corp, Wuxi 214072, Jiangsu, Peoples R China
[3] Xidian Univ, Dept Microelect, Xian 710071, Peoples R China
[4] Xi An Jiao Tong Univ, Sch Elect & Informat Engn, Xian 710049, Peoples R China
来源
IEICE ELECTRONICS EXPRESS | 2021年 / 18卷 / 03期
关键词
RF; power detector; limiting amplifier; wideband; wide dynamic range; highly reliable; GAIN AMPLIFIER; CMOS; CANCELLATION;
D O I
10.1587/elex.18.20200426
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A wideband RF logarithmic power detector with large dynamic range is presented in this work. The power detector fabricated in 180-nm SiGe process employs the successive approximation technique over a 6-stage cascaded amplifier chain. A cross-coupled cascode amplifier architecture is proposed to expand bandwidth up to 8 GHz. With a temperature compensation circuit and a DC offset compensation loop, the detector provides consistent logarithmic performance at different temperatures in band, which can be applied in highly reliable RF systems. The measured input dynamic range is larger than 50 dB in 1MHz similar to 8 GHz with less than +/- 1 dB error and 55 dB at 8 GHz with less than similar to 3 dB error. The measured temperature drift is less than similar to 1 :0 dB at 5 GHz over the temperature range from 40 to 85.
引用
收藏
页码:1 / 5
页数:5
相关论文
共 31 条
[1]  
Bai CF, 2014, IEEE MEDITERR ELECT, P271, DOI 10.1109/MELCON.2014.6820545
[2]  
Cherry E.M., 1963, IEE Proc. B, V110, P375
[3]   Wide Dynamic-Range CMOS RMS Power Detector [J].
Choi, Jaewon ;
Lee, Jongsoo ;
Xi, Yao ;
Myoung, Seong-Sik ;
Baek, Sanghyun ;
Kwon, Dae Hyn ;
Bui, Quang-Diep ;
Lee, Jaehun ;
Oh, Dongjin ;
Cho, Thomas Byunghak .
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2016, 64 (03) :868-880
[4]   10-Gb/s limiting amplifier and laser/modulator driver in 0.18-μm CMOS technology [J].
Galal, S ;
Razavi, B .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2003, 38 (12) :2138-2146
[5]   A 2-V 10.7-MHz CMOS limiting amplifier/RSSI [J].
Huang, PC ;
Chen, YH ;
Wang, CK .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2000, 35 (10) :1474-1480
[6]  
Jain A., 2012, 2012 IEEE Power & Energy Society General Meeting. New Energy Horizons - Opportunities and Challenges, DOI 10.1109/PESGM.2012.6345769
[7]   Fully Configurable Capacitor-Less Oversampling DC Offset Cancellation for Direct Conversion Receivers [J].
Jin, Jing ;
Liu, Xiaoming ;
Yan, Taotao ;
Zhou, Jianjun .
IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS, 2019, 66 (10) :1683-1687
[8]   GIGAHERTZ-BAND HIGH-GAIN LOW-NOISE AGC AMPLIFIERS IN FINE-LINE NMOS [J].
JINDAL, RP .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1987, 22 (04) :512-521
[9]   A Broadband Logarithmic Power Detector in 0.13-μm CMOS [J].
Kim, Kihyun ;
Kwon, Youngwoo .
IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, 2013, 23 (09) :498-500
[10]   A 4 GHz 60 dB Variable Gain Amplifier With Tunable DC Offset Cancellation in 65 nm CMOS [J].
Kumar, Thangarasu Bharatha ;
Ma, Kaixue ;
Yeo, Kiat Seng .
IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, 2015, 25 (01) :37-39